Data Sheet
ADL8121
GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.025 GHz to 12 GHz
FEATURES
FUNCTIONAL BLOCK DIAGRAM
► Low noise figure: 2.5 dB typical at 0.025 GHz to 10 GHz
► Single positive supply (self biased)
► High gain: 16.5 dB typical at 0.025 GHz to 10 GHz
► High OIP3: 36 dBm typical at 0.025 GHz to 10 GHz
► RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP
Figure 1.
APPLICATIONS
► Test instrumentation
► Military communications
► Military radar
► Telecommunications
GENERAL DESCRIPTION
The ADL8121 is a gallium arsenide (GaAs), monolithic microwave
integrated circuit (MMIC), pseudomorphic high electron mobility
transistor (pHEMT), low noise wideband amplifier that operates
from 0.025 GHz to 12 GHz.
The ADL8121 provides a typical gain of 16.5 dB, a 2.5 dB typical
noise figure, and a typical output third-order intercept (OIP3) of
36 dBm across the 0.025 GHz to 10 GHz frequency range, requir-
ing only 95 mA from a 5 V supply voltage. The saturated output
power (PSAT) of 21.5 dBm typical across the 0.025 GHz to
10 GHz frequency range enables the low noise amplifier (LNA)
to function as a local oscillator (LO) driver for many of Analog
Devices, Inc., balanced, in-phase and quadrature (I/Q) or image
rejection mixers.
The ADL8121 also features inputs and outputs that are internally
matched to 50 Ω, making the device ideal for surface-mounted
technology (SMT)-based and is housed in a RoHS-compliant, 2 mm
× 2 mm, 6-lead LFCSP.
Rev. A
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