Datasheet > ADL8100

ADL8100

更新时间： 2024-11-15 17:02:03

品牌	Logo	应用领域
亚德诺 - ADI		放大器
页数	文件大小	规格书
27页	1935K
描述
GaAs、pHEMT、MMIC、低噪声放大器，0.01 GHz至20 GHz

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ADL8100 数据手册

Data Sheet

ADL8100

GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.01 GHz to 20 GHz

FEATURES

FUNCTIONAL BLOCK DIAGRAM

► Low noise figure: 2.5 dB typical at 6 GHz to 14 GHz

► Single positive supply (self biased)

► High gain: 20 dB typical from 0.01 GHz to 6 GHz

► High OIP3: 38 dBm typical from 0.01 GHz to 6 GHz

► RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP

APPLICATIONS

► Satellite communication

► Telecommunications

► Civilian radars

Figure 1. Functional Block Diagram

► Military radars

► Weather radars

► Electronic warfare

GENERAL DESCRIPTION

The ADL8100 is a gallium arsenide (GaAs), monolithic microwave

integrated circuit (MMIC), pseudomorphic high electron mobility

transistor (pHEMT), wideband low noise amplifier (LNA) that oper-

ates from 0.01 GHz to 20 GHz. The ADL8100 provides a typical

gain of 20 dB at 0.01 GHz to 6 GHz, a 2.5 dB typical noise figure at

6 GHz to 14 GHz, and a typical output third-order intercept (OIP3)

of 38 dBm at 0.01 GHz to 6 GHz, requiring only 220 mA from a

5 V supply voltage. The power dissipation can be lowered at the

expense of OIP3 and output power. The ADL8100 also features

inputs and outputs that are DC-coupled and internally matched to

50 Ω.

The ADL8100 is housed in a RoHS-compliant, 2 mm × 2 mm,

8-lead LFCSP.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog

Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to

change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and

registered trademarks are the property of their respective owners.

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