Datasheet > ADL8104ACPZN

ADL8104ACPZN

更新时间： 2024-11-15 02:51:39

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
23页	617K
描述
Wideband, High Linearity, Low Noise Amplifier, 0.4 GHz to 7.5 GHz

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ADL8104ACPZN 数据手册

Wideband, High Linearity,

Low Noise Amplifier, 0.4 GHz to 7.5 GHz

Data Sheet

ADL8104

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Single positive supply (self biased)

High OIP2: 52 dBm typical at 0.6 GHz to 7.5 GHz

High gain: 15 dB typical at 0.6 GHz to 6 GHz

High OIP3: 32 dBm typical

Low noise figure: 3.5 dB typical at 0.4 GHz to 6 GHz

RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP

GND

12 NC

11 RF

OUT

GND

APPLICATIONS

Test instrumentation

Military communications

Figure 1.

GENERAL DESCRIPTION

The ADL8104 is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT), low noise, wideband,

high linearity amplifier that operates from 0.4 GHz to 7.5 GHz.

high output second-order intercept (OIP2) of 52 dBm typical at

0.6 GHz to 6 GHz, making the ADL8104 suitable for military

and test instrumentation applications.

The ADL8104 also features inputs and outputs that are

internally matched to 50 Ω. The RF_INand RF_OUTpins are

internally ac-coupled and the bias inductor is also integrated,

making the ADL8104 ideal for surface-mounted technology

(SMT)-based, high density applications.

The ADL8104 provides a typical gain of 15 dB at 0.6 GHz to

6 GHz, a 3.5 dB typical noise figure at 0.4 GHz to 6 GHz, a

20 dBm typical output power for 1 dB compression (OP1dB) at

0.6 GHz to 6 GHz, and a typical output third-order intercept

(OIP3) of 32 dBm at 0.6 GHz to 6 GHz, requiring only 150 mA

from a 5 V drain supply voltage. The low noise amplifier has a

The ADL8104 is housed in an RoHS-compliant, 3 mm × 3 mm,

16-lead LFCSP.

Rev. 0

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice.

No license is granted by implication or otherwise under any patent or patent rights of Analog

Devices. Trademarks and registeredtrademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

www.analog.com

12 3 4 5 6 7...23

中文翻译

下载PDF

与ADL8104ACPZN相关器件

型号	品牌	获取价格	描述	数据表
ADL8104ACPZN-R7	ADI	获取价格	Wideband, High Linearity, Low Noise Amplifier, 0.4 GHz to 7.5 GHz
ADL8104-EVALZ	ADI	获取价格	Wideband, High Linearity, Low Noise Amplifier, 0.4 GHz to 7.5 GHz
ADL8105	ADI	获取价格	GaAs、pHEMT、MMIC、低噪声放大器，5 GHz至20 GHz
ADL8107	ADI	获取价格	GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz
ADL8107ACPZN	ADI	获取价格	GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz
ADL8107ACPZN-R7	ADI	获取价格	GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz
ADL8107-EVALZ	ADI	获取价格	GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz
ADL8111	ADI	获取价格	Bypass Amplifier
ADL8111ACCZN	ADI	获取价格	Bypass Amplifier
ADL8111ACCZN-R7	ADI	获取价格	Bypass Amplifier

与ADL8104ACPZN相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

5
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

2
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

ADL8104ACPZN

ADL8104ACPZN 数据手册

与ADL8104ACPZN相关器件

与ADL8104ACPZN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ADL8104ACPZN

ADL8104ACPZN 数据手册

与ADL8104ACPZN相关器件

与ADL8104ACPZN相关文章

您还可以找

您在本页遇到什么问题？