AlGaAs Invisible Laser Diode ADL-80Y01TX/TZ
2004/05 ver. 1.0
★808nm 200mW 5.6φ TO-Type
High Power Laser Diode
•Features
1. Standard 5.6φTO-type: easy for design, assembly and integration
2. Low operation current
3. Long operation lifetime, MTTF>10000 hrs
4. Cost effective
•Applications
1. Pumps for solid state lasers
2. Miniature low power green laser
3. Medical use
•Absolute maximum ratings
TZ
TX
Parameter
Symbol Condition
Rating
200
Unit
mW
V
Light output power
Reverse voltage (LD)
Case temperature
Storage temperature
PO
VRL
TC
CW
-
-
-
2
-10~+50
-40~+75
oC
TS
oC
•Electrical and optical characteristics (Tc=25oC)
Parameter
Peak wavelength
Symbol
λ
Min.
805
-
Typ.
Max.
811
75
Unit
nm
Conditions
808
55
Po=200mW
Threshold current
Operating current
Ith
mA
Po=200mW
Po=200mW
Iop
-
-
260
1.7
280
1.9
mA
V
Operating voltage
Vop
η
Differential efficiency
0.8
1
9
-
mW/mA
degree
degree
um
Po=150-200mW
θ
//
Parallel divergence angle
Perpendicular divergence angle
Emission point accuracy
-
-
-
15
48
±
80
θ
⊥
41
-
Po=200mW
Δ Δ Δ
x
y
z
ꢀ
Precautions
1. Do not operate the device above the maximum rating condition, even momentarily. It may cause unexpected permanent damage to the device.
2. Semiconductor laser device is very sensitive to electrostatic discharge. High voltage spike current may change the characteristics of the device, or malfunction at any time during
its service period. Therefore, proper measures for preventing electrostatic discharge are strongly recommended.
3. Effective heat sink can help the device operates under a more relax condition; as a result, a more stable characteristics and better reliability can be achieved. So it is
recommended that always apply proper heat sink before the device is operating.
4. Do not look into the laser beam directly by bare eyes. The laser beam may cause severe damage to human eyes.