Datasheet > A5M36SG239

A5M36SG239

更新时间： 2024-10-31 15:18:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
36页	1538K
描述
Airfast Power Amplifier Module with Autobias Control, 3400-3800 MHz, 32 dB, 8 W Avg

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A5M36SG239 数据手册

A5M36SG239

Airfast Power Amplifier Module with Autobias Control

Rev. 0 — 10 October 2023

Product data sheet

1 General description

The A5M36SG239 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that

demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and

low power remote radio heads. The field-proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G

systems. The module includes an autobias feature that automatically sets the transistor bias upon power up and an integrated

sensor that monitors the temperature. Communications to the module can be accomplished via either I²C or SPI.

2 Features and benefits

• 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier

• Advanced high performance in-package Doherty

• Fully matched (50 ohm input/output, DC blocked)

• Designed for low complexity digital linearization systems

• Reduced memory effects for improved linearized error vector magnitude

• Autobias on power up

• Temperature sensing

• Digital interface (I²C or SPI)

• Embedded registers and DACs for setting bias conditions

• Tx enable control pin for TDD operation

3 Typical LTE performance

Table 1. Typical LTE Performance

Carrier Center

Frequency

Gain

(dB)

ACPR

(dBc)

PAE

(%)

Typical LTE Performance — 3400–3800 MHz (P_out= 8 W Avg., V_DC1= V_DP1= 5 Vdc, V_DC2= V_DP2= 48 Vdc, 1 × 20 MHz

LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.)^[1]

3410 MHz

3500 MHz

3600 MHz

3700 MHz

3790 MHz

31.4

31.7

31.6

31.0

–27.4

–26.6

–26.2

–26.9

–27.2

44.1

44.4

46.3

48.0

47.3

[1] All data measured with device soldered to NXP reference circuit.

12 3 4 5 6 7...36

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