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A5M39TG140 PDF预览

A5M39TG140

更新时间: 2024-10-31 15:19:07
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
17页 227K
描述
Airfast Power Amplifier Module, 3700-3980 MHz, 32 dB, 9 W Avg

A5M39TG140 数据手册

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A5M39TG140  
Airfast Power Amplifier Module  
Rev. 0 — January 2023  
Data Sheet: Technical Data  
The A5M39TG140 is a fully integrated Doherty power amplifier module  
designed for wireless infrastructure applications that demand high  
performance in the smallest footprint. Ideal for applications in massive MIMO  
systems, outdoor small cells and low power remote radio heads. The  
fieldproven LDMOS and GaNonSiC power amplifiers are designed for TDD  
LTE and 5G systems.  
A5M39TG140  
3700–3980 MHz  
3700–3980 MHz, 32 dB, 9 W Avg.  
AIRFAST POWER AMPLIFIER  
MODULE  
Typical LTE Performance: Pout = 9 W Avg., VDC1 = VDP1 = 5 Vdc,  
VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB  
@ 0.01% Probability on CCDF. (1)  
Carrier Center  
Frequency  
Gain  
(dB)  
ACPR  
(dBc)  
PAE  
(%)  
3710 MHz  
3840 MHz  
3970 MHz  
32.6  
32.7  
32.3  
–32.4  
–32.8  
–32.7  
46.4  
46.6  
46.4  
1. All data measured with device soldered in NXP reference circuit.  
Features  
2stage module solution that includes an LDMOS integrated circuit as a  
driver and a GaN final stage amplifier  
Advanced high performance inpackage Doherty  
10 mm y 6 mm Module  
Fully matched (50 ohm input/output, DC blocked)  
Designed for low complexity digital linearization systems  
Reduced memory effects for improved linearized error vector magnitude  
NXP reserves the right to change the detail specifications as may be required to permit  
improvements in the design of its products.  

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