Datasheet > A5M36TG140

A5M36TG140

更新时间： 2024-10-31 15:19:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	230K
描述
Airfast Power Amplifier Module, 3300-3800 MHz, 32 dB, 9 W Avg

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A5M36TG140 数据手册

A5M36TG140

Airfast Power Amplifier Module

Rev. 1 — January 2023

Data Sheet: Technical Data

The A5M36TG140 is a fully integrated Doherty power amplifier module

designed for wireless infrastructure applications that demand high

performance in the smallest footprint. Ideal for applications in massive MIMO

systems, outdoor small cells and low power remote radio heads. The

field−proven LDMOS and GaN−on−SiC power amplifiers are designed for TDD

LTE and 5G systems.

A5M36TG140

3300–3800 MHz

3300–3800 MHz, 32 dB, 9 W Avg.

AIRFAST POWER AMPLIFIER

MODULE

• Typical LTE Performance: P_out= 9 W Avg., V_DC1= V_DP1= 5 Vdc,

V_DC2= V_DP2= 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB

@ 0.01% Probability on CCDF. ⁽¹⁾

Carrier Center

Frequency

Gain

(dB)

ACPR

(dBc)

PAE

(%)

3310 MHz

3410 MHz

3500 MHz

3600 MHz

3700 MHz

3790 MHz

30.5

31.0

31.3

31.8

32.2

32.3

–28.8

–30.1

–31.8

–33.7

–36.0

–34.8

42.9

45.4

46.2

46.1

45.8

45.4

1. All data measured with device soldered in NXP reference circuit.

10 mm y 6 mm Module

Features

• 2−stage module solution that includes an LDMOS integrated circuit as a

driver and a GaN final stage amplifier

• Advanced high performance in−package Doherty

• Fully matched (50 ohm input/output, DC blocked)

• Designed for low complexity digital linearization systems

• Reduced memory effects for improved linearized error vector magnitude

NXP reserves the right to change the detail specifications as may be required to permit

improvements in the design of its products.

12 3 4 5 6 7...17

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