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A5M36TG140-TC PDF预览

A5M36TG140-TC

更新时间: 2024-10-31 17:00:51
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
18页 351K
描述
Airfast Power Amplifier Module, 3400-3800 MHz, 31 dB, 10 W Avg

A5M36TG140-TC 数据手册

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A5M36TG140- TC  
Airfast Power Amplifier Module  
Rev. 2 — 19 October 2023  
Product data sheet  
The A5M36TG140- TC is a fully integrated Doherty power amplifier module  
designed for wireless infrastructure applications that demand high  
performance in the smallest footprint. Ideal for applications in massive MIMO  
systems, outdoor small cells and low power remote radio heads. The  
field- proven LDMOS and GaN- on- SiC power amplifiers are designed for TDD  
LTE and 5G systems.  
A5M36TG140- TC  
3400–3800 MHz  
3400–3800 MHz, 31 dB, 10 W Avg.  
AIRFAST POWER AMPLIFIER  
MODULE  
Typical LTE Performance: Pout = 10 W Avg., VDC1 = VDP1 = 5 Vdc,  
DC2 = VDP2 = 48 Vdc, 1 20 MHz LTE, Input Signal PAR = 8 dB  
@ 0.01% Probability on CCDF. (1)  
V
Carrier Center  
Frequency  
Gain  
(dB)  
ACPR  
(dBc)  
PAE  
(%)  
3410 MHz  
3600 MHz  
3790 MHz  
31.0  
31.2  
31.0  
–27.7  
–28.2  
–31.7  
42.9  
46.9  
45.4  
1. All data measured with device soldered to NXP reference circuit.  
Features  
2- stage module solution that includes an LDMOS integrated circuit as a  
driver and a GaN final stage amplifier  
14 mm 10 mm Module  
Advanced high performance in- package Doherty  
Thermal path is separated from electrical/solder connection path for  
enhanced thermal dissipation  
Fully matched (50 ohm input/output, DC blocked)  
Designed for low complexity digital linearization systems  
Reduced memory effects for improved linearized error vector magnitude  

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