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A5M36TG040-TC PDF预览

A5M36TG040-TC

更新时间: 2024-06-27 12:13:50
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
22页 741K
描述
Airfast Power Amplifier Module, 3400-3800 MHz, 31 dB, 10 W Avg.

A5M36TG040-TC 数据手册

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A5M36TG040-TC  
Airfast Power Amplifier Module  
Rev. 1 — 13 March 2024  
Product data sheet  
1 General description  
The A5M36TG040-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure  
applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO  
systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN-on-SiC  
power amplifiers are designed for TDD LTE and 5G systems.  
2 Features and benefits  
2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier  
Advanced high performance in-package Doherty  
Thermal path is separated from electrical/solder connection path for enhanced thermal dissipation  
Fully matched (50 ohm input/output, DC blocked)  
Designed for low complexity digital linearization systems  
Reduced memory effects for improved linearized error vector magnitude  
3 Typical performance  
Table 1.ꢀ3400–3800 MHz — Typical LTE performance  
Pout = 10 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01%  
Probability on CCDF.[1]  
Carrier Center  
Frequency  
Gain  
(dB)  
ACPR  
(dBc)  
PAE  
(%)  
3410 MHz  
3600 MHz  
3790 MHz  
31.0  
31.2  
31.0  
–27.7  
–28.2  
–31.7  
42.9  
46.9  
45.4  
[1] All data measured with device soldered to NXP reference circuit.  
 
 
 
 

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