Datasheet > 935325969147

935325969147

更新时间： 2024-11-08 14:47:35

品牌	Logo	应用领域
恩智浦 - NXP		射频微波
页数	文件大小	规格书
20页	1209K
描述
Wide Band Medium Power Amplifier

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935325969147 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.71	射频/微波设备类型：	WIDE BAND MEDIUM POWER
Base Number Matches：	1

935325969147 数据手册

Document Number: MMZ25332B4

Rev. 1, 12/2017

NXP Semiconductors

Technical Data

2 W High Gain Power Amplifier for

MMZ25332B4T1

Cellular Infrastructure

InGaP GaAs HBT

The MMZ25332B4 is a versatile 2--stage power amplifier targeted at driver

and pre--driver applications for macro and micro base stations and final stage

applications for small cells. Its versatile design allows operation in any

frequency band from 1500 to 2700 MHz providing gain of more than 26.5 dB.

The device operates off a 5 V supply, and its bias currents and portions of the

matching networks are adjustable for optimum performance in any specific

application. It is housed in a QFN 4 x 4 surface mount package which allows for

maximum via hole pattern. The MMZ25332B4 offers exceptional reliability,

ruggedness and ESD performance.

1500–2700 MHz, 26.5 dB, 33 dBm

InGaP HBT LINEAR AMPLIFIER



Typical Performance: V_CC1= V_CC2= V_BIAS= 5 Vdc, I_CQ= 400 mA

(dB)

ACPR

(dBc)

(mA)

out

QFN 4  4--24L

Frequency

(dBm)

Test Signal

2140 MHz

2350 MHz

2600 MHz

21.7

21.5

22.5

26.5

26.6

26.7

–48

441

446

453

W--CDMA

LTE

Features



Frequency: 1500–2700 MHz

P1dB: 33 dBm @ 2500 MHz

Power gain: 26.5 dB @ 2500 MHz

OIP3: 48 dBm @ 2500 MHz



EVM ≤ 3% @ 23.5 dBm P_out, WLAN (802.11g)

Active bias control (adjustable externally)

Power down control via V_BIAS

Single 3 to 5 volt supply

Single--ended power detector

Cost--effective 24--pin, 4 mm QFN surface mount plastic package

DET

CC1

/RF

CC2

out

CC2

/RF

CC2

out

BIAS

CIRCUIT

BIAS

BA1

BA2

Figure 1. Functional Block Diagram

 2015, 2017 NXP B.V.

MMZ25332B4T1

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...20

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