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935332873128 PDF预览

935332873128

更新时间: 2024-09-21 19:48:11
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
10页 264K
描述
RF Power Field-Effect Transistor

935332873128 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.68
Base Number Matches:1

935332873128 数据手册

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Document Number: A2G26H281--04S  
Rev. 1, 02/2017  
NXP Semiconductors  
Technical Data  
RF Power GaN Transistor  
This 50 W asymmetrical Doherty RF power GaN transistor is designed for  
cellular base station applications requiring very wide instantaneous bandwidth  
capability covering the frequency range of 2496 to 2690 MHz.  
A2G26H281--04SR3  
This part is characterized and performance is guaranteed for applications  
operating in the 2496 to 2690 MHz band. There is no guarantee of performance  
when this part is used in applications designed outside of these frequencies.  
2496–2690 MHz, 50 W AVG., 48 V  
AIRFAST RF POWER GaN  
TRANSISTOR  
2600 MHz  
Typical Doherty Single--Carrier W--CDMA Characterization Performance:  
DD = 48 Vdc, IDQA = 150 mA, VGSB = –5.4 Vdc, Pout = 50 W Avg.,  
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)  
V
G
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
Frequency  
2575 MHz  
2605 MHz  
2635 MHz  
(dB)  
14.3  
14.3  
14.3  
(%)  
61.9  
61.7  
60.9  
7.2  
7.1  
6.8  
–29.1  
–29.5  
–30.4  
NI--780S--4L  
1. All data measured in fixture with device soldered to heatsink.  
Features  
High terminal impedances for optimal broadband performance  
Advanced high performance in--package Doherty  
Able to withstand extremely high output VSWR and broadband operating  
conditions  
Carrier  
RF /V  
RF /V  
outA DSA  
3
4
1
2
inA GSA  
RF /V  
inB GSB  
RF /V  
outB DSB  
Peaking  
(Top View)  
Figure 1. Pin Connections  
2016–2017 NXP B.V.  

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