Document Number: MMRF2010N
Rev. 1, 04/2017
NXP Semiconductors
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
MMRF2010N
MMRF2010GN
The MMRF2010N is a 2--stage RFIC designed for IFF transponder
applications operating from 1030 to 1090 MHz. These devices are suitable for
use in pulse applications such as IFF and secondary radar transponders.
Typical Wideband Performance: (52 Vdc, T = 25°C)
1030–1090 MHz, 250 W PEAK, 50 V
RF LDMOS INTEGRATED
POWER AMPLIFIERS
A
Frequency
(MHz)
P
(W)
G
2nd Stage Eff.
(%)
out
ps
(1)
Signal Type
(dB)
34.1
33.4
33.6
32.6
Pulse
250 Peak
1030
1090
1030
1090
61.0
61.9
61.5
62.9
(128 μsec, 10% Duty Cycle)
Pulse
250 Peak
(2 msec, 20% Duty Cycle)
TO--270WB--14
PLASTIC
MMRF2010N
Narrowband Performance: (50 Vdc, T = 25°C)
A
P
Frequency
(MHz)
G
(dB)
2nd Stage Eff.
(%)
out
ps
Signal Type
(W)
(2)
1090
Pulse
250 Peak
32.1
61.4
(128 μsec, 10% Duty Cycle)
TO--270WBG--14
PLASTIC
MMRF2010GN
Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
(1)
1090
Pulse
> 20:1 at all
0.316 W
Peak
(3 dB
52
No Device
Degradation
(2 msec, 20% Phase Angles
Duty Cycle)
Overdrive)
1. Measured in 1030–1090 MHz reference circuit.
2. Measured in 1090 MHz narrowband test circuit.
Features
•
•
•
•
•
•
Characterized over 1030–1090 MHz
On--chip input (50 ohm) and interstage matching
Single ended
Integrated ESD protection
Low thermal resistance
Integrated quiescent current temperature compensation with
enable/disable function (3)
Typical Applications
•
•
Driver PA for high power pulse applications
IFF and secondary radar
3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
© 2015, 2017 NXP B.V.
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
1