Datasheet > 935323808528

935323808528

更新时间： 2024-11-08 20:59:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	384K
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RF Power Field-Effect Transistor

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935323808528 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

935323808528 数据手册

Document Number: MRF24300N

Rev. 0, 5/2016

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

MRF24300N

N--Channel Enhancement--Mode Lateral MOSFET

This 300 W CW transistor is designed for industrial, scientific, medical (ISM)

applications at 2450 MHz. This device is suitable for use in CW, pulse and

linear applications. This high gain, high efficiency device is targeted to replace

industrial magnetrons and will provide longer life and ease of use.

2450 MHz, 300 W CW, 32 V

RF POWER LDMOS TRANSISTOR

Typical Performance: In 2400–2500 MHz reference circuit, V = 32 Vdc

Frequency

(MHz)

(W)

(dB)

(%)

out

(W)

Signal Type

2450

15.9

13.1

60.5

320

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

(1)

OM--780--2L

PLASTIC

2450

> 5:1

at all Phase

Angles

15.0

(2 dB

Overdrive)

No Device

Degradation

1. Measured in 2450 MHz reference circuit.

Features

•

Characterized with series equivalent large--signal impedance parameters

Internally matched for ease of use

Qualified for operation at 32 Vdc

Integrated ESD protection

Low thermal resistance

Gate

Drain

Target Applications

(Top View)

•

Industrial heating:

– Sterilization

Note: Exposed backside of the package is

the source terminal for the transistor.

– Pasteurization

•

Industrial drying

Moisture--leveling process

Curing

Welding

Heat sealing

Microwave ablation

Renal denervation

Diathermy

Figure 1. Pin Connections

MRF24300N

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...14

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