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935318596128 PDF预览

935318596128

更新时间: 2024-09-19 19:55:43
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
8页 216K
描述
RF Power Field-Effect Transistor

935318596128 技术参数

生命周期:ActiveReach Compliance Code:unknown
Base Number Matches:1

935318596128 数据手册

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Document Number: A2T18H450W19S  
Rev. 0, 9/2016  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistor  
N--Channel Enhancement--Mode Lateral MOSFET  
A2T18H450W19SR6  
This 89 W asymmetrical Doherty RF power LDMOS transistor is designed for  
cellular base station applications requiring very wide instantaneous bandwidth  
capability covering the frequency range of 1805 to 1880 MHz.  
1800 MHz  
1805–1880 MHz, 89 W AVG., 30 V  
AIRFAST RF POWER LDMOS  
TRANSISTOR  
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 30 Vdc,  
DQA = 800 mA, VGSB = 0.9 Vdc, Pout = 89 W Avg., Input Signal  
PAR = 9.9 dB @ 0.01% Probability on CCDF.  
I
G
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
Frequency  
1805 MHz  
1840 MHz  
1880 MHz  
(dB)  
16.6  
16.7  
16.5  
(%)  
47.1  
47.5  
47.7  
7.9  
8.0  
7.9  
–31.4  
–32.9  
–38.8  
Features  
NI--1230S--4S4S  
Advanced High Performance In--Package Doherty  
Designed for Wide Instantaneous Bandwidth Applications  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
Able to Withstand Extremely High Output VSWR and Broadband Operating  
Conditions  
Designed for Digital Predistortion Error Correction Systems  
(2)  
(2)  
VBW  
1
2
8
7
VBW  
AG  
AD  
Carrier  
(1)  
RF /V  
RF /V  
outA DSA  
inA GSA  
RF /V  
RF /V  
outB DSB  
3
4
6
5
inB GSB  
Peaking  
(2)  
(2)  
VBW  
VBW  
BG  
BD  
(Top View)  
Figure 1. Pin Connections  
1. Pin connections 6 and 7 are DC coupled  
and RF independent.  
2. Device cannot operate with the V current  
DD  
supplied through pins 1, 4, 5, and 8.  
Freescale Semiconductor, Inc., 2016. All rights reserved.  

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