Document Number: A2T18H450W19S
Rev. 0, 9/2016
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
A2T18H450W19SR6
This 89 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 1805 to 1880 MHz.
1800 MHz
1805–1880 MHz, 89 W AVG., 30 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 30 Vdc,
DQA = 800 mA, VGSB = 0.9 Vdc, Pout = 89 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
I
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
1805 MHz
1840 MHz
1880 MHz
(dB)
16.6
16.7
16.5
(%)
47.1
47.5
47.7
7.9
8.0
7.9
–31.4
–32.9
–38.8
Features
NI--1230S--4S4S
Advanced High Performance In--Package Doherty
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
Designed for Digital Predistortion Error Correction Systems
(2)
(2)
VBW
1
2
8
7
VBW
AG
AD
Carrier
(1)
RF /V
RF /V
outA DSA
inA GSA
RF /V
RF /V
outB DSB
3
4
6
5
inB GSB
Peaking
(2)
(2)
VBW
VBW
BG
BD
(Top View)
Figure 1. Pin Connections
1. Pin connections 6 and 7 are DC coupled
and RF independent.
2. Device cannot operate with the V current
DD
supplied through pins 1, 4, 5, and 8.
Freescale Semiconductor, Inc., 2016. All rights reserved.
A2T18H450W19SR6
RF Device Data
Freescale Semiconductor, Inc.
1