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935318801128 PDF预览

935318801128

更新时间: 2024-11-08 21:12:55
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
18页 744K
描述
RF Power Field-Effect Transistor

935318801128 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknownBase Number Matches:1

935318801128 数据手册

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Document Number: A2T18S260--12S  
Rev. 0, 9/2016  
NXP Semiconductors  
Technical Data  
RF Power LDMOS Transistor  
N--Channel Enhancement--Mode Lateral MOSFET  
This 50 W RF power LDMOS transistor is designed for cellular base station  
applications covering the frequency range of 1805 to 1995 MHz.  
A2T18S260--12SR3  
1800 MHz  
Typical single--carrier W--CDMA performance: VDD = 28 Vdc,  
DQ = 1400 mA, Pout = 50 W Avg., input signal PAR = 9.9 dB @ 0.01%  
I
1805–1995 MHz, 50 W AVG., 28 V  
AIRFAST RF POWER LDMOS  
TRANSISTOR  
probability on CCDF.  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
IRL  
(dB)  
ps  
D
Frequency  
1805 MHz  
1840 MHz  
1880 MHz  
(dB)  
18.9  
19.3  
19.2  
(%)  
30.1  
30.0  
30.3  
7.7  
7.6  
7.5  
–35.8  
–36.5  
–36.8  
–17  
–19  
–9  
1900 MHz  
Typical single--carrier W--CDMA performance: VDD = 28 Vdc,  
DQ = 1400 mA, Pout = 50 W Avg., input signal PAR = 9.9 dB @ 0.01%  
I
probability on CCDF.  
NI--780S--2L2L  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
IRL  
(dB)  
ps  
D
Frequency  
1930 MHz  
1960 MHz  
1995 MHz  
(dB)  
19.1  
19.4  
19.6  
(%)  
29.2  
29.9  
31.0  
7.6  
7.6  
7.4  
–35.1  
–36.0  
–35.7  
–23  
–15  
–10  
(1)  
4
3
VBW  
Features  
RF /V  
in GS  
1
RF /V  
out DS  
Greater negative gate--source voltage range for improved Class C  
operation  
Designed for digital predistortion error correction systems  
Optimized for Doherty applications  
(1)  
VBW  
2
(Top View)  
Figure 1. Pin Connections  
1. Device cannot operate with V current  
DD  
supplied through pin 2 and pin 4.  
2016 NXP B.V.  

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