Datasheet > 935318801128

935318801128

更新时间： 2024-11-10 21:12:55

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
18页	744K
描述
RF Power Field-Effect Transistor

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935318801128 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

935318801128 数据手册

Document Number: A2T18S260--12S

Rev. 0, 9/2016

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 50 W RF power LDMOS transistor is designed for cellular base station

applications covering the frequency range of 1805 to 1995 MHz.

A2T18S260--12SR3

1800 MHz



Typical single--carrier W--CDMA performance: V_DD= 28 Vdc,

_DQ= 1400 mA, P_out= 50 W Avg., input signal PAR = 9.9 dB @ 0.01%

1805–1995 MHz, 50 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR

probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

18.9

19.3

19.2

(%)

30.1

30.0

30.3

7.7

7.6

7.5

–35.8

–36.5

–36.8

–17

–19

–9

1900 MHz

Typical single--carrier W--CDMA performance: V_DD= 28 Vdc,

_DQ= 1400 mA, P_out= 50 W Avg., input signal PAR = 9.9 dB @ 0.01%



probability on CCDF.

NI--780S--2L2L



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

1930 MHz

1960 MHz

1995 MHz

(dB)

19.1

19.4

19.6

(%)

29.2

29.9

31.0

7.6

7.4

–35.1

–36.0

–35.7

–23

–15

–10

(1)

VBW

Features

RF /V

in GS

RF /V

out DS



Greater negative gate--source voltage range for improved Class C

operation



Designed for digital predistortion error correction systems

Optimized for Doherty applications

(1)

VBW

(Top View)

Figure 1. Pin Connections

1. Device cannot operate with V current

supplied through pin 2 and pin 4.

 2016 NXP B.V.

A2T18S260--12SR3

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...18

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