Datasheet > 935318822578

935318822578

更新时间： 2024-11-09 08:45:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
21页	821K
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RF Power Field-Effect Transistor

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935318822578 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.63
Base Number Matches：	1

935318822578 数据手册

Document Number: MRF1K50N

Rev. 0, 11/2016

NXP Semiconductors

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

MRF1K50N

MRF1K50GN

These high ruggedness devices are designed for use in high VSWR industrial,

scientific and medical applications, as well as radio and VHF TV broadcast,

sub--GHz aerospace and mobile radio applications. Their unmatched input and

output design allows for wide frequency range use from 1.8 to 500 MHz.

1.8–500 MHz, 1500 W CW, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

Typical Performance: V_DD= 50 Vdc

Frequency

(MHz)

(W)

(dB)

(%)

out

Signal Type

(1,2)

87.5--108

1421 CW

23.1

23.4

83.2

75.1

OM--1230--4L

PLASTIC

MRF1K50N

(3,4)

230

Pulse

1500 Peak

(100 μsec, 20% Duty Cycle)

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

(3)

230

Pulse

> 65:1 at all

15 Peak

(3 dB

No Device

Degradation

OM--1230G--4L

PLASTIC

(100 μsec, 20% Phase Angles

Duty Cycle)

Overdrive)

MRF1K50GN

1. Data from 87.5–108 MHz broadband reference circuit (page 5).

2. The values shown are the center band performance numbers across the indicated

frequency range.

3. Data from 230 MHz narrowband production test fixture (page 11).

4. All data measured in fixture with device soldered to heatsink.

Drain A

Drain B

Gate A

Gate B

Features

•

High drain--source avalanche energy absorption capability

Unmatched input and output allowing wide frequency range utilization

Device can be used single--ended or in a push--pull configuration

Characterized from 30 to 50 V for ease of use

Suitable for linear application

Integrated ESD protection with greater negative gate--source voltage range

for improved Class C operation

(Top View)

•

Recommended driver: MRFE6VS25N (25 W)

Note: Exposed backside of the package is

the source terminal for the transistor.

Typical Applications

Figure 1. Pin Connections

•

Industrial, Scientific, Medical (ISM)

– Laser generation

– Plasma etching

– Particle accelerators

– MRI and other medical applications

– Industrial heating, welding and drying systems

Broadcast

– Radio broadcast

– VHF TV broadcast

•

Aerospace

– VHF omnidirectional range (VOR)

– HF and VHF communications

– Weather radar

•

Mobile Radio

– VHF and UHF base stations

MRF1K50N MRF1K50GN

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...21

中文翻译

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