Datasheet > 935317972515

935317972515

更新时间： 2024-01-17 05:28:56

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
28页	1116K
描述
RF Power Field-Effect Transistor

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935317972515 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

935317972515 数据手册

Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 90 mA, P = 1.26 W Avg., f = 2170 MHz, Single--Carrier

out

W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel

Bandwidth @ 5 MHz Offset.

Power Gain

20.0

18.5

—

21.7

21.5

--40.6

-- 1 4

—

Drain Efficiency



Adjacent Channel Power Ratio

Input Return Loss

ACPR

IRL

--37.9

-- 9

dBc

—

Load Mismatch (In Freescale Test Fixture, 50 ohm system) I = 90 mA, f = 2140 MHz

VSWR 5:1 at 32 Vdc, 13.9 W CW Output Power

(3 dB Input Overdrive from 10 W CW Rated Power)

No Device Degradation

Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 90 mA, 2110--2170 MHz Bandwidth

@ 1 dB Compression Point, CW

P1dB

—

out

AM/PM



--12.6



(Maximum value measured at the P3dB compression point across

the 2110--2170 MHz frequency range.)

VBW Resonance Point

VBW

—

120

—

MHz

res

(IMD Seventh Order Intermodulation Inflection Point)

Gain Flatness in 60 MHz Bandwidth @ P = 1.26 W Avg.

—

0.20

—

out

Gain Variation over Temperature

G

0.011

dB/C

(--30C to +85C)

Output Power Variation over Temperature

P1dB

—

0.004

—

dB/C

(--30C to +85C)

Table 6. Ordering Information

Device

Tape and Reel Information

Package

AFT27S010NT1

T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel

PLD--1.5W

AFT27S010NT1

RF Device Data

Freescale Semiconductor, Inc.

1 234 5 6 7...28

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