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935317972515 PDF预览

935317972515

更新时间: 2024-01-31 16:12:09
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
28页 1116K
描述
RF Power Field-Effect Transistor

935317972515 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknownBase Number Matches:1

935317972515 数据手册

 浏览型号935317972515的Datasheet PDF文件第4页浏览型号935317972515的Datasheet PDF文件第5页浏览型号935317972515的Datasheet PDF文件第6页浏览型号935317972515的Datasheet PDF文件第8页浏览型号935317972515的Datasheet PDF文件第9页浏览型号935317972515的Datasheet PDF文件第10页 
Table 8. Load Pull Performance — Maximum Power Tuning  
V
= 28 Vdc, I = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle  
DD  
DQ  
Max Output Power  
P1dB  
(1)  
Z
AM/PM  
()  
f
Z
Z
in  
()  
load  
()  
D
source  
()  
(%)  
60.2  
59.5  
60.1  
Gain (dB)  
21.0  
(dBm)  
41.2  
(W)  
13  
(MHz)  
2110  
2140  
2170  
1.23 -- j0.107  
1.08 -- j0.422  
1.12 -- j0.0337  
0.698 + j0.572  
0.877 + j0.537  
1.26 + j0.455  
5.85 + j3.49  
5.79 + j3.28  
5.57 + j3.12  
-- 1 2  
-- 1 3  
-- 11  
20.8  
41.2  
13  
20.7  
41.1  
13  
Max Output Power  
P3dB  
(2)  
Z
()  
AM/PM  
()  
f
Z
Z
()  
load  
D
source  
()  
in  
(%)  
59.6  
58.6  
59.8  
Gain (dB)  
18.7  
(dBm)  
42.0  
(W)  
16  
(MHz)  
2110  
2140  
2170  
1.23 -- j0.107  
1.08 -- j0.422  
1.12 -- j0.0337  
0.592 + j0.741  
0.807 + j0.78  
1.25 + j0.806  
6.75 + j2.96  
6.62 + j2.72  
6.47 + j2.61  
-- 1 8  
-- 2 0  
-- 1 7  
18.5  
42.0  
16  
18.4  
42.0  
16  
(1) Load impedance for optimum P1dB power.  
(2) Load impedance for optimum P3dB power.  
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.  
= Impedance as measured from gate contact to ground.  
= Measured impedance presented to the output of the device at the package reference plane.  
source  
in  
load  
Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning  
V
= 28 Vdc, I = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle  
DD  
DQ  
Max Drain Efficiency  
P1dB  
(1)  
Z
AM/PM  
()  
f
Z
Z
in  
()  
load  
()  
D
source  
()  
(%)  
67.5  
66.6  
67.3  
Gain (dB)  
22.7  
(dBm)  
39.7  
(W)  
9
(MHz)  
2110  
2140  
2170  
1.23 -- j0.107  
1.08 -- j0.422  
1.12 -- j0.0337  
0.609 + j0.446  
0.736 + j0.434  
1.03 + j0.312  
3.56 + j6.04  
3.63 + j5.62  
3.37 + j5.39  
-- 2 0  
-- 2 1  
-- 1 9  
22.4  
39.9  
10  
9
22.5  
39.6  
Max Drain Efficiency  
P3dB  
(2)  
Z
()  
AM/PM  
()  
f
Z
Z
()  
load  
D
source  
()  
in  
(%)  
67.3  
65.9  
67.1  
Gain (dB)  
20.5  
(dBm)  
40.5  
(W)  
11  
(MHz)  
2110  
2140  
2170  
1.23 -- j0.107  
1.08 -- j0.422  
1.12 -- j0.0337  
0.512 + j0.627  
0.671 + j0.667  
1.05 + j0.666  
3.80 + j5.81  
3.77 + j5.41  
3.83 + j5.15  
-- 2 9  
-- 3 1  
-- 2 7  
20.3  
40.6  
11  
20.2  
40.6  
12  
(1) Load impedance for optimum P1dB efficiency.  
(2) Load impedance for optimum P3dB efficiency.  
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.  
= Impedance as measured from gate contact to ground.  
= Measured impedance presented to the output of the device at the package reference plane.  
source  
in  
load  
Input Load Pull  
Tuner and Test  
Circuit  
Output Load Pull  
Tuner and Test  
Circuit  
Device  
Under  
Test  
Z
Z
in  
Z
load  
source  
AFT27S010NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
7

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