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934055717118 PDF预览

934055717118

更新时间: 2024-09-17 21:19:27
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
14页 167K
描述
TRANSISTOR 50 A, 150 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power

934055717118 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:PLASTIC, D2PAK-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.17
雪崩能效等级(Eas):460 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):50 A最大漏源导通电阻:0.035 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934055717118 数据手册

 浏览型号934055717118的Datasheet PDF文件第2页浏览型号934055717118的Datasheet PDF文件第3页浏览型号934055717118的Datasheet PDF文件第4页浏览型号934055717118的Datasheet PDF文件第5页浏览型号934055717118的Datasheet PDF文件第6页浏览型号934055717118的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PSMN035-150B; PSMN035-150P  
N-channel TrenchMOS(TM)  
transistor  
Product specification  
August 1999  

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