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934055299127 PDF预览

934055299127

更新时间: 2024-11-12 04:30:43
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关
页数 文件大小 规格书
6页 47K
描述
Snubberless TRIAC, 600V V(DRM), 4A I(T)RMS, TO-220AB, PLASTIC, TO-220F, 3 PIN

934055299127 数据手册

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Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA204X series B and C  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated high commutation triacs in  
a plastic full pack envelope intended  
for use in circuits where high static and  
dynamic dV/dt and high dI/dt can  
occur. These devices will commutate  
the full rated rms current at the  
maximum rated junction temperature  
without the aid of a snubber.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BTA204X- 500B 600B 800B  
BTA204X- 500C 600C 800C  
VDRM  
Repetitive peak  
off-state voltages  
RMS on-state current  
500  
600  
800  
V
IT(RMS)  
ITSM  
4
4
25  
4
25  
A
A
Non-repetitive peak on-state 25  
current  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
case  
T2  
T1  
2
main terminal 2  
gate  
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
4
A
Ths 92 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
25  
27  
3.1  
100  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
December 1998  
1
Rev 1.000  

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