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934055326118

更新时间： 2024-09-23 14:47:23
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关
页数 文件大小 规格书
6页 48K
描述
600V, 12A, TRIAC, PLASTIC, D2PAK-3

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934055326118 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Transferred零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.21Is Samacsys：N
外壳连接：MAIN TERMINAL 2配置：SINGLE
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：250认证状态：Not Qualified
最大均方根通态电流：12 A断态重复峰值电压：600 V
表面贴装：YES端子面层：TIN
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40触发设备类型：TRIAC
Base Number Matches：1

934055326118 数据手册

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Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA212B series D, E and F  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated guaranteed commutation  
triacs in a plastic envelope suitable for  
surface mounting intended for use in  
motor control circuits or with other highly  
inductive loads. These devices balance  
the requirements of commutation  
performance and gate sensitivity. The  
"sensitive gate" E series and "logic level"  
D series are intended for interfacing with  
low power drivers, including micro  
controllers.  
SYMBOL  
PARAMETER  
MAX. MAX. UNIT  
BTA212B-  
BTA212B-  
BTA212B-  
600D  
-
600E 800E  
600F 800F  
VDRM  
Repetitive peak off-state  
voltages  
RMS on-state current  
Non-repetitive peak on-state  
current  
600  
800  
V
IT(RMS)  
ITSM  
12  
95  
12  
95  
A
A
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
mb  
T2  
T1  
2
main terminal 2  
gate  
3
2
mb main terminal 2  
1
3
G
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
6001  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
12  
A
Tmb ≤ 99 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
95  
105  
45  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
February 2000  
1
Rev 1.000  
123456

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