5秒后页面跳转
934055325127 PDF预览

934055325127

更新时间: 2024-09-24 04:16:23
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关
页数 文件大小 规格书
6页 47K
描述
600V, 12A, TRIAC, TO-220AB, PLASTIC, SC-46, 3 PIN

934055325127 数据手册

 浏览型号934055325127的Datasheet PDF文件第2页浏览型号934055325127的Datasheet PDF文件第3页浏览型号934055325127的Datasheet PDF文件第4页浏览型号934055325127的Datasheet PDF文件第5页浏览型号934055325127的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA212 series D, E and F  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivatedguaranteedcommutationtriacsin  
a plastic envelope intended for use in motor  
control circuits or with other highly inductive  
loads. These devices balance the  
requirements of commutation performance  
and gate sensitivity. The "sensitive gate" E  
series and "logic level" D series are intended  
for interfacing with low power drivers,  
including micro controllers.  
SYMBOL  
PARAMETER  
MAX. UNIT  
BTA212-  
BTA212-  
BTA212-  
600D  
600E  
600F  
VDRM  
Repetitive peak off-state  
voltages  
RMS on-state current  
Non-repetitive peak on-state  
current  
600  
V
IT(RMS)  
ITSM  
12  
95  
A
A
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
tab  
main terminal 1  
main terminal 2  
gate  
T2  
T1  
2
3
G
1 2 3  
tab main terminal 2  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
6001  
12  
UNIT  
V
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
A
Tmb 99 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
95  
105  
45  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
PGM  
PG(AV)  
-
-
-
2
5
0.5  
A
W
W
over any 20 ms  
period  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
April 2002  
1
Rev 2.000  

与934055325127相关器件

型号 品牌 获取价格 描述 数据表
934055326118 NXP

获取价格

600V, 12A, TRIAC, PLASTIC, D2PAK-3
934055335115 NXP

获取价格

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP
934055339115 NXP

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP
934055340115 NXP

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP
934055351118 NXP

获取价格

TRANSISTOR 50 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
934055354115 NXP

获取价格

DIODE 0.2 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC, SMD, SC-89, 3 P
934055355115 NXP

获取价格

DIODE 0.2 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC, SMD, SC-89, 3 P
934055359115 NXP

获取价格

DIODE 3.3 V, 0.22 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236, PLASTIC, SMD
934055360115 NXP

获取价格

DIODE 5.1 V, 0.22 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236, PLASTIC, SMD
934055364115 NXP

获取价格

DIODE 12 V, 0.22 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236, PLASTIC, SMD,