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934055351118 PDF预览

934055351118

更新时间： 2024-11-11 14:47:23
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
12页 118K
描述
TRANSISTOR 50 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

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934055351118 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84雪崩能效等级（Eas）：80 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (ID)：50 A
最大漏源导通电阻：0.024 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：200 A认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

934055351118 数据手册

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Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Logic level FET  
PHP50N06LT, PHB50N06LT, PHD50N06LT  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• ’Trench’ technology  
• Very low on-state resistance  
• Fast switching  
• Stable off-state characteristics  
• High thermal cycling performance  
• Low thermal resistance  
VDSS = 55 V  
d
ID = 50 A  
R
DS(ON) ≤ 24 mΩ (VGS = 5 V)  
g
RDS(ON) ≤ 22 mΩ (VGS = 10 V)  
s
GENERAL DESCRIPTION  
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.  
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching  
applications.  
The PHP50N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PHB50N06LT is supplied in the SOT404 surface mounting package.  
The PHD50N06LT is supplied in the SOT428 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
SOT428  
PIN  
1
DESCRIPTION  
tab  
tab  
tab  
gate  
2
drain1  
source  
3
2
2
tab drain  
1
3
1
3
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Continuous drain current  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ  
-
-
-
-
-
-
-
55  
55  
± 13  
50  
V
V
V
A
A
A
W
˚C  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
35  
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
200  
125  
175  
- 55  
1 It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.  
September 1998  
1
Rev 1.400  
1234567...12

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