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934055453127

更新时间: 2024-09-23 21:20:59
品牌 Logo 应用领域
恩智浦 - NXP 局域网开关晶体管
页数 文件大小 规格书
7页 58K
描述
TRANSISTOR 6 A, 525 V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, FULL PACK-3, BIP General Purpose Power

934055453127 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:PLASTIC, FULL PACK-3针数:3
Reach Compliance Code:unknown风险等级:5.67
外壳连接:ISOLATED最大集电极电流 (IC):6 A
集电极-发射极最大电压:525 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934055453127 数据手册

 浏览型号934055453127的Datasheet PDF文件第2页浏览型号934055453127的Datasheet PDF文件第3页浏览型号934055453127的Datasheet PDF文件第4页浏览型号934055453127的Datasheet PDF文件第5页浏览型号934055453127的Datasheet PDF文件第6页浏览型号934055453127的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Silicon Diffused Power Transistor  
BUJ403BX  
GENERAL DESCRIPTION  
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended  
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor  
control systems, etc.  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
VCESM  
VCBO  
VCEO  
VEBO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1200  
1200  
525  
-
V
V
V
V
A
A
W
V
Collector-base voltage (open emitter)  
Collector-emitter voltage (open base)  
Emitter-base voltage (open collector)  
Collector current (DC)  
-
-
18  
-
-
-
0.14  
21  
140  
6
ICM  
Collector current peak value  
Total power dissipation  
10  
32  
Ptot  
Ths 25 ˚C  
VCEsat  
hFEsat  
tfi  
Collector-emitter saturation voltage  
DC current gain  
IC = 2 A; IB = 0.4 A  
IC = 2 A; VCE = 5 V  
IC = 2.5 A; IB1 = 0.5 A  
1.0  
25  
Fall time  
203  
ns  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
c
case  
base  
2
collector  
emitter  
b
3
case isolated  
1
2 3  
e
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCESM  
VCEO  
VCBO  
VEBO  
IC  
Collector to emitter voltage  
VBE = 0 V  
-
1200  
525  
1200  
-
V
V
Collector to emitter voltage (open base)  
Collector to base voltage (open emitter)  
Emitter-base voltage (open collector)  
Collector current (DC)  
-
-
V
16  
V
-
6
A
ICM  
Collector current peak value  
Base current (DC)  
-
10  
A
IB  
IBM  
Ptot  
Tstg  
Tj  
-
3
A
Base current peak value  
-
-
5
A
Total power dissipation  
Ths 25 ˚C  
32  
W
˚C  
˚C  
Storage temperature  
-65  
-
150  
150  
Junction temperature  
November 1999  
1
Rev 1.100  

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