Datasheet > 934055301118

934055301118

更新时间： 2024-11-12 07:02:59

品牌	Logo	应用领域
恩智浦 - NXP		三端双向交流开关
页数	文件大小	规格书
6页	49K
描述
Snubberless TRIAC, 600V V(DRM), 4A I(T)RMS, PLASTIC, SC-63, DPAK-3

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934055301118 数据手册

Philips Semiconductors

Product specification

Three quadrant triacs

high commutation

BTA204S series B and C

BTA204M series B and C

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated high commutation triacs in

a plastic envelope suitable for surface

mounting intended for use in circuits

where high static and dynamic dV/dt

and high dI/dt can occur. These

devices will commutate the full rated

rms current at the maximum rated

junction temperature without the aid of

a snubber.

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BTA204S (or BTA204M)- 500B 600B 800B

BTA204S (or BTA204M)- 500C 600C 800C

V_DRM

Repetitive peak

500

600

800

off-state voltages

RMS on-state current

I_T(RMS)

I_TSM

Non-repetitive peak on-state 25

current

PINNING - SOT428

PIN CONFIGURATION

SYMBOL

NUMBER

Standard Alternative

tab

MT1

MT2

gate

MT2

gate

MT2

MT1

MT2

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

full sine wave;

T_mb≤ 107 ˚C

Non-repetitive peak

on-state current

full sine wave;

T_j= 25 ˚C prior to

surge

t = 20 ms

3.1

100

t = 16.7 ms

I²t

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

t = 10 ms

A²s

A/µs

dI_T/dt

I_TM= 6 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

I_GM

V_GM

P_GM

P_G(AV)

over any 20 ms

period

0.5

T_stg

T_j

Storage temperature

Operating junction

temperature

-40

150

125

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 6 A/µs.

December 1998

Rev 1.000

12 3 4 5 6

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