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8EWF12STR PDF预览

8EWF12STR

更新时间: 2024-11-07 08:11:43
品牌 Logo 应用领域
威世 - VISHAY 整流二极管软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 216K
描述
Surface Mountable Fast Soft Recovery Diode, 8 A

8EWF12STR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.23Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:FAST SOFT RECOVERY HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):225认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向恢复时间:0.27 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

8EWF12STR 数据手册

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8EWF..SPbF Soft Recovery Series  
Vishay High Power Products  
Surface Mountable  
Fast Soft Recovery Diode, 8 A  
FEATURES/DESCRIPTION  
Base  
common  
cathode  
+
The 8EWF..SPbF fast soft recovery rectifier  
series has been optimized for combined short  
reverse recovery time, low forward voltage drop  
and low leakage current.  
Available  
RoHS*  
2
COMPLIANT  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
1
3
-
-
D-PAK  
Anode  
Anode  
This series is designed and qualified for industrial level and  
lead (Pb)-free.  
APPLICATIONS  
PRODUCT SUMMARY  
• Output rectification and freewheeling diode in inverters,  
choppers and converters  
VF at 8 A  
< 1.3 V  
80 ns  
trr  
VRRM  
1000/1200 V  
• Input rectifications where severe restrictions on conducted  
EMI should be met  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
UNITS  
Sinusoidal waveform  
8
1000/1200  
170  
A
V
A
8 A, TJ = 25 °C  
1 A, 100 A/µs  
Range  
1.3  
V
trr  
80  
ns  
°C  
TJ  
- 40 to 150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
8EWF10SPbF  
8EWF12SPbF  
1000  
1200  
1100  
1300  
4
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
8
UNITS  
Maximum average forward current  
IF(AV)  
TC = 94 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 to 10 ms, no voltage reapplied  
170  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
200  
144  
Maximum I2t for fusing  
I2t  
A2s  
200  
Maximum I2t for fusing  
I2t  
2000  
A2s  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94109  
Revision: 08-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

8EWF12STR 替代型号

型号 品牌 替代类型 描述 数据表
VS-8EWF12STRR-M3 VISHAY

完全替代

DIODE 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DP
VS-8EWF12STRL-M3 VISHAY

完全替代

DIODE 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DP

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