Datasheet > 8EWH02FNTR-M3

8EWH02FNTR-M3

更新时间： 2024-11-07 08:11:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	146K
描述
Hyperfast Rectifier, 8 A FRED Pt?

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

8EWH02FNTR-M3 数据手册

VS-8EWH02FN-M3

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt^®

FEATURES

• Hyperfast recovery time

2, 4

• 175 °C max. operating junction temperature

• Output rectification freewheeling

• Low forward voltage drop reduced Q_rrand soft

recovery

N/C

Anode

• Low leakage current

D-PAK (TO-252AA)

• Compliant to RoHS Directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21 definition

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DESCRIPTION/APPLICATIONS

PRODUCT SUMMARY

State of the art hyperfast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and hyperfast recovery time.

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in the output rectification

stage of SMPS, UPS, DC/DC converters as well as

freewheeling diode in low voltage inverters and chopper

motor drives.

Package

D-PAK (TO-252AA)

8 A

I_F(AV)

V_R

200 V

V_Fat I_F

0.97 V

t_rr(typ.)

T_Jmax.

Diode variation

23 ns

175 °C

Single die

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Peak repetitive forward current

Operating junction and storage temperatures

200

T_C= 156 °C

140

I_FSM

T_J= 25 °C

I_FM

T_C= 156 °C, f = 20 kHz, d = 50 %

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

200

0.91

0.75

0.97

0.85

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

Document Number: 93259

Revision: 31-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

与8EWH02FNTR-M3相关器件

型号	品牌	获取价格	描述	数据表
8EWH02FNTRR-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
8EWH06FN-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
8EWH06FNTRL-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
8EWH06FNTR-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
8EWH06FNTRR-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
8EWL06FN-M3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 8 A FRED Pt?
8EWL06FNTRL-M3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 8 A FRED Pt?
8EWL06FNTR-M3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 8 A FRED Pt?
8EWL06FNTRR-M3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 8 A FRED Pt?
8EWS	INFINEON	获取价格	SURFACE MOUNTABLE INPUT RECTIFIER DIODE

与8EWH02FNTR-M3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

19
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

16
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

39
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

37

产品中心

服务支持

精选活动

关于我们

帮助中心

8EWH02FNTR-M3

8EWH02FNTR-M3 数据手册

与8EWH02FNTR-M3相关器件

与8EWH02FNTR-M3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

8EWH02FNTR-M3

8EWH02FNTR-M3 数据手册

与8EWH02FNTR-M3相关器件

与8EWH02FNTR-M3相关文章

您还可以找

您在本页遇到什么问题？