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8EWH02FNTRL-M3

更新时间: 2024-11-30 08:11:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 146K
描述
Hyperfast Rectifier, 8 A FRED Pt?

8EWH02FNTRL-M3 数据手册

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VS-8EWH02FN-M3  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
2, 4  
• 175 °C max. operating junction temperature  
• Output rectification freewheeling  
• Low forward voltage drop reduced Qrr and soft  
recovery  
1
N/C  
3
Anode  
• Low leakage current  
D-PAK (TO-252AA)  
• Compliant to RoHS Directive 2002/95/EC  
• Halogen-free according to IEC 61249-2-21 definition  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DESCRIPTION/APPLICATIONS  
PRODUCT SUMMARY  
State of the art hyperfast recovery rectifiers specifically  
designed with optimized performance of forward voltage  
drop and hyperfast recovery time.  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Package  
D-PAK (TO-252AA)  
8 A  
IF(AV)  
VR  
200 V  
VF at IF  
0.97 V  
trr (typ.)  
TJ max.  
Diode variation  
23 ns  
175 °C  
Single die  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
200  
V
TC = 156 °C  
8
140  
IFSM  
TJ = 25 °C  
A
IFM  
TC = 156 °C, f = 20 kHz, d = 50 %  
16  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
200  
-
-
V
-
-
-
-
-
-
0.91  
0.75  
-
0.97  
0.85  
5
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
6
60  
-
Junction capacitance  
Series inductance  
CT  
LS  
22  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 93259  
Revision: 31-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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