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8EWS08STRR PDF预览

8EWS08STRR

更新时间: 2024-02-10 05:18:32
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
7页 532K
描述
Surface Mountable Input Rectifier Diode, 8 A

8EWS08STRR 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-252AA包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.18Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向电流:50 µA
子类别:Rectifier Diodes表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

8EWS08STRR 数据手册

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8EWS..SPbF High Voltage Series  
Vishay High Power Products  
Surface Mountable  
Input Rectifier Diode, 8 A  
DESCRIPTION/FEATURES  
Base  
The 8EWS..SPbF rectifier High Voltage Series has  
been optimized for very low forward voltage drop,  
with moderate leakage. The glass passivation  
technology used has reliable operation up to 150 °C junction  
temperature.  
cathode  
4, 2  
1
3
The high reverse voltage range available allows design of  
input stage primary rectification with outstanding voltage  
surge capability.  
D-PAK  
Anode  
Anode  
Typical applications are in input rectification and these  
products are designed to be used with Vishay HPP switches  
and output rectifiers which are available in identical package  
outlines.  
PRODUCT SUMMARY  
VF at 5 A  
1 V  
200 A  
800/1200 V  
IFSM  
This product has been designed and qualified for industrial  
level.  
VRRM  
Compliant to RoHS directive 2002/95/EC.  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
NEMA FR-4 or G10 glass fabric-based epoxy  
with 4 oz. (140 µm) copper  
1.2  
1.6  
A
Aluminum IMS, RthCA = 15 °C/W  
2.5  
5.5  
2.8  
6.5  
Aluminum IMS with heatsink, RthCA = 5 °C/W  
Note  
A = 55 °C, TJ = 125 °C, footprint 300 mm2  
T
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
UNITS  
Sinusoidal waveform  
8
A
V
800/1200  
200  
A
VF  
8 A, TJ = 25 °C  
1.10  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM  
PEAK REVERSE VOLTAGE  
V
V
RSM, MAXIMUM NON-REPETITIVE  
PEAK REVERSE VOLTAGE  
V
IRRM  
AT 150 °C  
mA  
PART NUMBER  
8EWS08SPbF  
8EWS12SPbF  
800  
900  
0.5  
1200  
1300  
Document Number: 94349  
Revision: 01-Jul-09  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

8EWS08STRR 替代型号

型号 品牌 替代类型 描述 数据表
VS-8EWS08STR-M3 VISHAY

完全替代

DIODE 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWS08STRL-M3 VISHAY

完全替代

DIODE 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWS08S-M3 VISHAY

完全替代

DIODE 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA

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