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8EWL06FNTR-M3

更新时间: 2024-11-30 08:11:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 154K
描述
Ultralow VF Ultrafast Rectifier, 8 A FRED Pt?

8EWL06FNTR-M3 数据手册

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New Product  
VS-8EWL06FN-M3  
Vishay Semiconductors  
Ultralow VF Ultrafast Rectifier, 8 A FRED Pt®  
FEATURES  
• Ultrafast recovery time, extremely low VF and  
soft recovery  
2, 4  
• 175 °C maximum operating junction temperature  
• For PFC DCM operation  
• Low leakage current  
1
N/C  
3
Anode  
• Compliant to RoHS Directive 2002/95/EC  
D-PAK (TO-252AA)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Halogen-free according to IEC 61249-2-21 definition  
DESCRIPTION  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
PRODUCT SUMMARY  
Package  
D-PAK (TO-252AA)  
8 A  
IF(AV)  
VR  
600 V  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS inverters or as freewheeling diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce  
over dissipation in the switching element and snubbers.  
VF at IF  
1.05 V  
trr (typ.)  
TJ max.  
Diode variation  
60 ns  
175 °C  
Single die  
APPLICATIONS  
AC/DC SMPS 70 W to 400 W  
e.g. laptop and printer AC adaptors, desktop PC, TV and  
monitor, games units and DVD AC/DC power supplies.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
600  
V
TC = 158 °C  
8
140  
IFSM  
TJ = 25 °C  
A
IFM  
TC = 158 °C, f = 20 kHz, d = 50 %  
16  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
0.96  
1.05  
0.86  
5
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
0.81  
VR = VR rated  
-
-
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
100  
-
Junction capacitance  
Series inductance  
CT  
LS  
8
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 93240  
Revision: 05-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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