8EWS10STRRPBF

更新时间： 2024-11-30 13:05:03

品牌	Logo	应用领域
英飞凌 - INFINEON		整流二极管输入元件
页数	文件大小	规格书
7页	202K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-252AA, DPAK-3

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8EWS10STRRPBF 数据手册

Bulletin I2108 rev. G 08/00

SAFEIR Series

8EWS..S

SURFACE MOUNTABLE

V_F< 1V @ 5A

I_FSM= 200A

INPUT RECTIFIER DIODE

Description/Features

The 8EWS..S rectifier SAFEIR series has been

optimized for very low forward voltage drop, with

moderate leakage. The glass passivation technology

used has reliable operation up to 150° C junction

temperature.

V_RRM800 to 1200V

The High Reverse Voltage range available allows

design of input stage primary rectification with

Outstanding Voltage Surge capability.

Typicalapplicationsareininputrectificationandthese

products are designed to be used with International

Rectifier Switches and Output Rectifiers which are

available in identical package outlines.

Output Current in Typical Applications

Applications

Single-phase Bridge Three-phase Bridge

Units

NEMAFR-4orG10glassfabric-basedepoxy

with4oz(140µm)copper

1.2

1.6

AluminumIMS,R

=15°C/W

2.5

5.5

2.8

6.5

thCA

AluminumIMSwithheatsink,R

=5°C/W

thCA

T =55°C,T =125°C,footprint300mm

Package Outline

Major Ratings and Characteristics

Characteristics 8EWS..S Units

Sinusoidal

waveform

F(AV)

Range(*)

800 to1200

200

RRM

FSM

@5A,T =25°C

1.0

TO-252AA (D-Pak)

-55 to150

°C

(*) for higher voltage up to 1600V contact factory

12 3 4 5 6 7

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