Datasheet > 8EWH02FNTRR-M3

8EWH02FNTRR-M3

更新时间： 2024-09-18 08:11:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	146K
描述
Hyperfast Rectifier, 8 A FRED Pt?

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8EWH02FNTRR-M3 数据手册

VS-8EWH02FN-M3

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt^®

FEATURES

• Hyperfast recovery time

2, 4

• 175 °C max. operating junction temperature

• Output rectification freewheeling

• Low forward voltage drop reduced Q_rrand soft

recovery

N/C

Anode

• Low leakage current

D-PAK (TO-252AA)

• Compliant to RoHS Directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21 definition

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DESCRIPTION/APPLICATIONS

PRODUCT SUMMARY

State of the art hyperfast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and hyperfast recovery time.

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in the output rectification

stage of SMPS, UPS, DC/DC converters as well as

freewheeling diode in low voltage inverters and chopper

motor drives.

Package

D-PAK (TO-252AA)

8 A

I_F(AV)

V_R

200 V

V_Fat I_F

0.97 V

t_rr(typ.)

T_Jmax.

Diode variation

23 ns

175 °C

Single die

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Peak repetitive forward current

Operating junction and storage temperatures

200

T_C= 156 °C

140

I_FSM

T_J= 25 °C

I_FM

T_C= 156 °C, f = 20 kHz, d = 50 %

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

200

0.91

0.75

0.97

0.85

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

Document Number: 93259

Revision: 31-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与8EWH02FNTRR-M3相关器件

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8EWH06FNTR-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
8EWH06FNTRR-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
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