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8ETH03SPBF PDF预览

8ETH03SPBF

更新时间: 2024-11-09 06:33:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 123K
描述
Hyperfast Rectifier, 8 A FRED PtTM

8ETH03SPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.47其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:HFRHP外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:300 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30

8ETH03SPBF 数据手册

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8ETH03SPbF/8ETH03-1PbF  
Vishay High Power Products  
Hyperfast Rectifier,  
8 A FRED PtTM  
FEATURES  
8ETH03-1PbF  
• Hyperfast recovery time  
8ETH03SPbF  
Available  
• Low forward voltage drop  
RoHS*  
• Low leakage current  
COMPLIANT  
• 175 °C operating junction temperature  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for Q101 level  
Base  
cathode  
2
2
DESCRIPTION/APPLICATIONS  
300 V series are the state of the art hyperfast recovery  
rectifiers designed with optimized performance of forward  
voltage drop and hyperfast recovery time.  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
3
1
3
1
N/C  
Anode  
N/C  
Anode  
D2PAK  
TO-262  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diodes in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
trr  
IF(AV)  
VR  
35 ns  
8 A  
300 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
MAX.  
300  
UNITS  
Repetitive peak reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
V
IF(AV)  
TC = 155 °C  
TC = 25 °C  
8
A
IFSM  
100  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 8 A  
300  
-
-
V
-
-
-
-
-
-
1.0  
0.83  
0.02  
6.0  
31  
1.25  
1.00  
20  
200  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
µA  
TJ = 125 °C, VR = VR rated  
VR = 300 V  
Junction capacitance  
Series inductance  
CT  
LS  
pF  
nH  
Measured lead to lead 5 mm from package body  
8
-
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94025  
Revision: 21-May-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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