Datasheet > 8ETH06PBF_11

8ETH06PBF_11

更新时间： 2024-09-18 08:11:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	184K
描述
Hyperfast Rectifier, 8 A FRED Pt

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8ETH06PBF_11 数据手册

VS-8ETH06PbF, VS-8ETH06FPPbF

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt^®

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

TO-220AC

TO-220 FULL-PAK

• Fully isolated package (V_INS= 2500 V_RMS

• UL E78996 pending

)

Base

cathode

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

Cathode

Anode

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

VS-8ETH06PbF

VS-8ETH06FPPbF

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

PRODUCT SUMMARY

Package

TO-220AC, TO-220FP

I_F(AV)

8 A

600 V

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS, inverters or as freewheeling

diodes.

V_R

V_Fat I_F

2.4 V

t_rrtyp.

18 ns

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

T_Jmax.

Diode variation

175 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Repetitive peak reverse voltage

V_RRM

600

T_C= 144 °C

T_C= 108 °C

T_J= 25 °C

Average rectified forward current

I_F(AV)

FULL-PAK

100

Non-repetitive peak surge current

Repetitive peak forward current

I_FSM

FULL-PAK

I_FM

Operating junction and storage temperatures

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

600

2.0

1.3

0.3

2.4

1.8

500

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Document Number: 94026

Revision: 28-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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