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8ETH06STRL PDF预览

8ETH06STRL

更新时间: 2024-11-07 06:33:39
品牌 Logo 应用领域
威世 - VISHAY 整流二极管软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
7页 127K
描述
Hyperfast Rectifier, 8 A FRED PtTM

8ETH06STRL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-263包装说明:D2PAK-3
针数:3Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.74
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
应用:HYPER FAST RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.8 V
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:90 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

8ETH06STRL 数据手册

 浏览型号8ETH06STRL的Datasheet PDF文件第2页浏览型号8ETH06STRL的Datasheet PDF文件第3页浏览型号8ETH06STRL的Datasheet PDF文件第4页浏览型号8ETH06STRL的Datasheet PDF文件第5页浏览型号8ETH06STRL的Datasheet PDF文件第6页浏览型号8ETH06STRL的Datasheet PDF文件第7页 
8ETH06S/8ETH06-1  
Vishay High Power Products  
Hyperfast Rectifier,  
8 A FRED PtTM  
FEATURES  
8ETH06S  
8ETH06-1  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Designed and qualified for industrial level  
Base  
cathode  
2
2
DESCRIPTION/APPLICATIONS  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
1
N/C  
3
1
N/C  
3
Anode  
Anode  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
D2PAK  
TO-262  
These devices are intended for use in PFC boost stage in  
the AC-DC section of SMPS, inverters or as freewheeling  
diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
trr (typical)  
18 ns  
8 A  
IF(AV)  
VR  
600 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
600  
V
TC = 144 °C  
TJ = 25 °C  
8
90  
IFSM  
A
IFM  
16  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
2.0  
1.3  
0.3  
55  
2.4  
1.8  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
µA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
17  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Document Number: 93934  
Revision: 08-Sep-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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