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8ETH06FP PDF预览

8ETH06FP

更新时间: 2024-09-17 22:24:35
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管局域网软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
9页 207K
描述
Hyperfast Rectifier

8ETH06FP 数据手册

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Bulletin PD-20746 rev. F 02/04  
8ETH06  
8ETH06S  
8ETH06-1  
8ETH06FP  
Hyperfast Rectifier  
Features  
Hyperfast Recovery Time  
Low Forward Voltage Drop  
Low Leakage Current  
trr = 18ns typ.  
IF(AV) = 8Amp  
VR = 600V  
175°C Operating Junction Temperature  
2500V insulation voltage e  
UL E78996 approved  
Description/ Applications  
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,  
Hyperfast recover time, and soft recovery.  
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling  
diodes.  
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
Absolute Maximum Ratings  
Parameters  
Peak Repetitive Reverse Voltage  
Average Rectified Forward Current@ TC = 144°C  
Max  
600  
8
Units  
V
A
VRRM  
IF(AV)  
@ TC = 108°C (FULLPACK)  
IFSM  
Non Repetitive Peak Surge Current @ TJ = 25°C  
90  
100  
(FULLPACK)  
IFM  
Peak Repetitive Forward Current  
16  
TJ, TSTG Operating Junction and Storage Temperatures  
Case Styles  
- 65 to 175  
°C  
8ETH06FP  
8ETH06  
8ETH06S  
8ETH06-1  
Base  
Cathode  
2
2
Base  
Cathode  
2
1
3
Cathode  
Anode  
1
3
1
3
1
3
N/C  
Anode  
Anode  
N/C  
Cathode  
Anode  
TO-220AC  
www.irf.com  
D2PAK  
TO-262  
TO-220 FULLPACK  
1

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