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8ETH06PBF PDF预览

8ETH06PBF

更新时间: 2024-11-07 06:33:39
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
7页 116K
描述
Hyperfast Rectifier, 8 A FRED PtTM

8ETH06PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AC
包装说明:ROHS COMPLIANT PACKAGE-2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:8.19
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, UL RECOGNIZED
应用:HYPERFAST SOFT RECOVERY HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.3 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:90 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.025 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

8ETH06PBF 数据手册

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8ETH06PbF/8ETH06FPPbF  
Vishay High Power Products  
Hyperfast Rectifier,  
8 A FRED PtTM  
FEATURES  
• Hyperfast recovery time  
8ETH06PbF  
8ETH06FPPbF  
Pb-free  
• Low forward voltage drop  
Available  
• Low leakage current  
RoHS*  
COMPLIANT  
• 175 °C operating junction temperature  
• Fully isolated package (VINS = 2500 VRMS  
• UL E78996 approved  
)
Base  
cathode  
• Lead (Pb)-free  
2
• Designed and qualified for industrial level  
DESCRIPTION/APPLICATIONS  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
These devices are intended for use in PFC boost stage in the  
AC-DC section of SMPS, inverters or as freewheeling  
diodes.  
1
3
Cathode  
Anode  
1
3
Cathode  
Anode  
TO-220AC  
TO-220 FULL-PAK  
PRODUCT SUMMARY  
trr (typical)  
18 ns  
8 A  
IF(AV)  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
VR  
600 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Repetitive peak reverse voltage  
VRRM  
600  
V
TC = 144 °C  
Average rectified forward current  
FULL-PAK  
IF(AV)  
8
TC = 108 °C  
TJ = 25 °C  
90  
100  
A
Non-repetitive peak surge current  
FULL-PAK  
IFSM  
Repetitive peak forward current  
IFM  
16  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
2.0  
1.3  
0.3  
55  
2.4  
1.8  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
µA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
17  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94026  
Revision: 08-Apr-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

8ETH06PBF 替代型号

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VS-8ETH06-N3 VISHAY

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