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74LVC1G58GF PDF预览

74LVC1G58GF

更新时间: 2024-11-18 05:05:51
品牌 Logo 应用领域
恩智浦 - NXP 逻辑集成电路光电二极管
页数 文件大小 规格书
18页 101K
描述
Low-power configurable multiple function gate

74LVC1G58GF 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅: 不含铅
是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:1 X 1 MM, 0.50 MM HEIGHT, PLASTIC, SOT-891, SON-6
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.14
系列:LVC/LCX/ZJESD-30 代码:S-PDSO-N6
JESD-609代码:e3长度:1 mm
负载电容(CL):50 pF逻辑集成电路类型:LOGIC CIRCUIT
最大I(ol):0.024 A湿度敏感等级:1
功能数量:1端子数量:6
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装等效代码:SOLCC6,.04,14封装形状:SQUARE
封装形式:SMALL OUTLINE, VERY THIN PROFILE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:3.3 V
Prop。Delay @ Nom-Sup:7.9 ns认证状态:Not Qualified
施密特触发器:YES座面最大高度:0.5 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:0.35 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1 mmBase Number Matches:1

74LVC1G58GF 数据手册

 浏览型号74LVC1G58GF的Datasheet PDF文件第2页浏览型号74LVC1G58GF的Datasheet PDF文件第3页浏览型号74LVC1G58GF的Datasheet PDF文件第4页浏览型号74LVC1G58GF的Datasheet PDF文件第5页浏览型号74LVC1G58GF的Datasheet PDF文件第6页浏览型号74LVC1G58GF的Datasheet PDF文件第7页 
74LVC1G58  
Low-power configurable multiple function gate  
Rev. 03 — 27 August 2007  
Product data sheet  
1. General description  
The 74LVC1G58 provides configurable multiple functions. The output state is determined  
by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,  
NOR, XOR, inverter and buffer. All inputs can be connected to VCC or GND.  
The three inputs (A, B and C) are capable of transforming slowly changing input signals  
into sharply defined, jitter-free output signals.  
The gate switches at different points for positive and negative-going signals. The  
difference between the positive voltage VT+ and the negative voltage VTis defined as the  
hysteresis voltage VH.  
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this  
device in a mixed 3.3 V and 5 V environment.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing the damaging backflow current through the device  
when it is powered down.  
2. Features  
I Wide supply voltage range from 1.65 V to 5.5 V  
I 5 V tolerant input/output for interfacing with 5 V logic  
I High noise immunity  
I Complies with JEDEC standard:  
N JESD8-7 (1.65 V to 1.95 V)  
N JESD8-5 (2.3 V to 2.7 V)  
N JESD8B/JESD36 (2.7 V to 3.6 V).  
I ESD protection:  
N HBM JESD22-A114E exceeds 2000 V  
N MM JESD22-A115-A exceeds 200 V.  
I ±24 mA output drive (VCC = 3.0 V)  
I CMOS low power consumption  
I Latch-up performance exceeds 250 mA  
I Direct interface with TTL levels  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C.  

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IC SPECIALTY LOGIC CIRCUIT, Logic IC:Other