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74LVC1G58GV PDF预览

74LVC1G58GV

更新时间: 2024-09-29 11:09:39
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
18页 266K
描述
Low-power configurable multiple function gateProduction

74LVC1G58GV 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.16
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-G6
JESD-609代码:e3长度:2.9 mm
逻辑集成电路类型:LOGIC CIRCUIT湿度敏感等级:1
功能数量:1端子数量:6
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1.5 mmBase Number Matches:1

74LVC1G58GV 数据手册

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74LVC1G58  
Low-power configurable multiple function gate  
Rev. 11 — 1 February 2022  
Product data sheet  
1. General description  
The 74LVC1G58 is a configurable multiple function gate with Schmitt-trigger inputs. The device  
can be configured as any of the following logic functions AND, OR, NAND, NOR, XOR, inverter  
and buffer; using the 3-bit input. All inputs can be connected diectly to VCC or GND. Inputs can be  
driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators  
in mixed 3.3 V and 5 V environments.  
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry  
disables the output, preventing the potentially damaging backflow current through the device when  
it is powered down.  
2. Features and benefits  
Wide supply voltage range from 1.65 V to 5.5 V  
High noise immunity  
±24 mA output drive (VCC = 3.0 V)  
CMOS low power dissipation  
IOFF circuitry provides partial Power-down mode operation  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Overvoltage tolerant inputs to 5.5 V  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8C (2.7 V to 3.6 V)  
JESD36 (4.5 V to 5.5 V)  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V.  
Multiple package options  
Specified from -40 °C to +85 °C and -40 °C to +125 °C.  
 
 

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