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74LV132PW-Q100 PDF预览

74LV132PW-Q100

更新时间: 2024-11-18 15:32:35
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管逻辑集成电路
页数 文件大小 规格书
16页 134K
描述
IC NAND GATE, Gate

74LV132PW-Q100 技术参数

生命周期:Transferred零件包装代码:TSSOP
包装说明:TSSOP,针数:14
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.58系列:LV/LV-A/LVX/H
JESD-30 代码:R-PDSO-G14长度:5 mm
逻辑集成电路类型:NAND GATE功能数量:4
输入次数:2端子数量:14
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
传播延迟(tpd):43 ns筛选级别:AEC-Q100
座面最大高度:1.1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:4.4 mmBase Number Matches:1

74LV132PW-Q100 数据手册

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74LV132-Q100  
Quad 2-input NAND Schmitt trigger  
Rev. 1 — 11 November 2013  
Product data sheet  
1. General description  
The 74LV132-Q100 is a low-voltage Si-gate CMOS device that is pin and function  
compatible with 74HC132-Q100 and 74HCT132-Q100.  
The 74LV132-Q100 contains four 2-input NAND gates which accept standard input  
signals. These gates are capable of transforming slowly changing input signals into  
sharply defined, jitter-free output signals.  
The gate switches at different points for positive and negative-going signals. The  
difference between the positive voltage VT+ and the negative voltage VTis defined as the  
input hysteresis voltage VH.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Wide operating voltage: 1.0 V to 5.5 V  
Optimized for low voltage applications: 1.0 V to 3.6 V  
Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V  
Typical output ground bounce < 0.8 V at VCC = 3.3 V and Tamb = 25 C  
Typical HIGH-level output voltage (VOH) undershoot: > 2 V at VCC = 3.3 V and  
Tamb = 25 C  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  
Multiple package options  
3. Applications  
Wave and pulse shapers for highly noisy environments  
Astable multivibrators  
Monostable multivibrators  
 
 
 

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