74HC3G07GD

更新时间： 2024-11-29 06:31:55

品牌	Logo	应用领域
恩智浦 - NXP		逻辑集成电路光电二极管
页数	文件大小	规格书
13页	85K
描述
Triple buffer with open-drain outputs

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74HC3G07GD 数据手册

74HC3G07; 74HCT3G07

Triple buffer with open-drain outputs

Rev. 02 — 12 May 2009

Product data sheet

1. General description

The 74HC3G07 and 74HCT3G07 are high-speed Si-gate CMOS devices. They provide

three buffers with open-drain outputs.

The outputs of the 74HC3G07 and 74HCT3G07 devices are open drains and can be

connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH

wired-AND functions. For digital operation this device must have a pull-up resistor to

establish a logic HIGH-level.

The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.

The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.

2. Features

I Wide supply voltage range from 2.0 V to 6.0 V

I High noise immunity

I Low power dissipation

I Multiple package options

I ESD protection:

N HBM JESD22-A114E exceeds 2000 V

N MM JESD22-A115-A exceeds 200 V

I Speciﬁed from −40 °C to +85 °C and −40 °C to +125 °C

3. Ordering information

Table 1.

Ordering information

Type number

Package

Temperature range Name

Description

Version

74HC3G07DP

74HCT3G07DP

74HC3G07DC

74HCT3G07DC

74HC3G07GD

74HCT3G07GD

−40 °C to +125 °C

TSSOP8

plastic thin shrink small outline package; 8 leads;

body width 3 mm; lead length 0.5 mm

SOT505-2

VSSOP8

plastic very thin shrink small outline package; 8 leads; SOT765-1

body width 2.3 mm

XSON8U plastic extremely thin small outline package; no leads; SOT996-2

8 terminals; UTLP based; body 3 × 2 × 0.5 mm

12 3 4 5 6 7...13

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