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74AUP2G34GF,132 PDF预览

74AUP2G34GF,132

更新时间: 2024-11-11 14:37:23
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管逻辑集成电路触发器
页数 文件大小 规格书
19页 196K
描述
74AUP2G34 - Low-power dual buffer SON 6-Pin

74AUP2G34GF,132 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:1 X 1 MM, 0.50 MM HEIGHT, PLASTIC, SOT-891, SON-6
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.58
系列:AUP/ULP/VJESD-30 代码:S-PDSO-N6
JESD-609代码:e3长度:1 mm
负载电容(CL):30 pF逻辑集成电路类型:BUFFER
最大I(ol):0.0017 A湿度敏感等级:1
功能数量:1输入次数:1
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC6,.04,14
封装形状:SQUARE封装形式:SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:1.2/3.3 V
Prop。Delay @ Nom-Sup:20.8 ns传播延迟(tpd):20.8 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:0.5 mm子类别:Gates
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):0.8 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:0.35 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1 mmBase Number Matches:1

74AUP2G34GF,132 数据手册

 浏览型号74AUP2G34GF,132的Datasheet PDF文件第2页浏览型号74AUP2G34GF,132的Datasheet PDF文件第3页浏览型号74AUP2G34GF,132的Datasheet PDF文件第4页浏览型号74AUP2G34GF,132的Datasheet PDF文件第5页浏览型号74AUP2G34GF,132的Datasheet PDF文件第6页浏览型号74AUP2G34GF,132的Datasheet PDF文件第7页 
74AUP2G34  
Low-power dual buffer  
Rev. 5 — 10 January 2013  
Product data sheet  
1. General description  
The 74AUP2G34 provides two low-power, low-voltage buffers.  
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
2. Features and benefits  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114F Class 3A exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
Low static power consumption; ICC = 0.9 A (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  
Multiple package options  
Specified from 40 C to +85 C and 40 C to +125 C  
 
 

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