74AUP2G34GF-H

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74AUP2G34GF-H 数据手册

74AUP1G332

Low-power 3-input OR gate

Rev. 02 — 29 February 2008

Product data sheet

1. General description

The 74AUP1G332 is a high-performance, low-power, low-voltage, Si-gate CMOS device,

superior to most advanced CMOS compatible TTL families.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall

times across the entire V_CCrange from 0.8 V to 3.6 V.

This device ensures a very low static and dynamic power consumption across the entire

V_CCrange from 0.8 V to 3.6 V.

This device is fully speciﬁed for partial power-down applications using I_OFF

The I_OFFcircuitry disables the output, preventing the damaging backﬂow current through

the device when it is powered down.

The 74AUP1G332 provides a single 3-input OR gate.

2. Features

I Wide supply voltage range from 0.8 V to 3.6 V

I High noise immunity

I Complies with JEDEC standards:

N JESD8-12 (0.8 V to 1.3 V)

N JESD8-11 (0.9 V to 1.65 V)

N JESD8-7 (1.2 V to 1.95 V)

N JESD8-5 (1.8 V to 2.7 V)

N JESD8-B (2.7 V to 3.6 V)

I ESD protection:

N HBM JESD22-A114E Class 3A exceeds 5000 V

N MM JESD22-A115-A exceeds 200 V

N CDM JESD22-C101-C exceeds 1000 V

I Low static power consumption; I_CC= 0.9 µA (maximum)

I Latch-up performance exceeds 100 mA per JESD 78 Class II

I Inputs accept voltages up to 3.6 V

I Low noise overshoot and undershoot < 10 % of V_CC

I I_OFFcircuitry provides partial Power-down mode operation

I Multiple package options

I Speciﬁed from −40 °C to +85 °C and −40 °C to +125 °C

12 3 4 5 6 7...16

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