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74AUP2G08GD,125 PDF预览

74AUP2G08GD,125

更新时间: 2024-11-21 14:51:15
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管逻辑集成电路触发器
页数 文件大小 规格书
17页 84K
描述
74AUP2G08 - Low-power dual 2-input AND gate SON 8-Pin

74AUP2G08GD,125 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SON包装说明:3 X 2 MM, 0.50 MM HEIGHT, PLASTIC, SOT996-2, XSON-8
针数:8Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.58
Is Samacsys:N系列:AUP/ULP/V
JESD-30 代码:R-PDSO-N8JESD-609代码:e4
长度:3 mm负载电容(CL):30 pF
逻辑集成电路类型:AND GATE最大I(ol):0.0017 A
湿度敏感等级:1功能数量:2
输入次数:2端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装等效代码:SOLCC8,.11,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:1.2/3.3 V
Prop。Delay @ Nom-Sup:24 ns传播延迟(tpd):24 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:0.5 mm子类别:Gates
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):0.8 V
标称供电电压 (Vsup):1.1 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:NICKEL PALLADIUM GOLD端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:2 mm
Base Number Matches:1

74AUP2G08GD,125 数据手册

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74AUP2G08  
Low-power dual 2-input AND gate  
Rev. 03 — 29 May 2008  
Product data sheet  
1. General description  
The 74AUP2G08 provides the dual 2-input AND function.  
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing a damaging backflow current through the device  
when it is powered down.  
2. Features  
I Wide supply voltage range from 0.8 V to 3.6 V  
I High noise immunity  
I Complies with JEDEC standards:  
N JESD8-12 (0.8 V to 1.3 V)  
N JESD8-11 (0.9 V to 1.65 V)  
N JESD8-7 (1.2 V to 1.95 V)  
N JESD8-5 (1.8 V to 2.7 V)  
N JESD8-B (2.7 V to 3.6 V)  
I ESD protection:  
N HBM JESD22-A114E Class 3A exceeds 5000 V  
N MM JESD22-A115-A exceeds 200 V  
N CDM JESD22-C101C exceeds 1000 V  
I Low static power consumption; ICC = 0.9 µA (maximum)  
I Latch-up performance exceeds 100 mA per JESD78 Class II  
I Inputs accept voltages up to 3.6 V  
I Low noise overshoot and undershoot < 10 % of VCC  
I IOFF circuitry provides partial Power-down mode operation  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C  
 
 

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