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74AUP2G125GM PDF预览

74AUP2G125GM

更新时间: 2024-11-16 03:53:31
品牌 Logo 应用领域
恩智浦 - NXP 总线驱动器总线收发器逻辑集成电路
页数 文件大小 规格书
19页 102K
描述
Low-power dual buffer/line driver; 3-state

74AUP2G125GM 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:QFN包装说明:VBCC, LCC8,.06SQ,20
针数:8Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.36
Is Samacsys:N控制类型:ENABLE LOW
系列:AUP/ULP/VJESD-30 代码:S-PBCC-B8
JESD-609代码:e4长度:1.6 mm
负载电容(CL):30 pF逻辑集成电路类型:BUS DRIVER
最大I(ol):0.0017 A湿度敏感等级:1
位数:1功能数量:2
端口数量:2端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:VBCC
封装等效代码:LCC8,.06SQ,20封装形状:SQUARE
封装形式:CHIP CARRIER, VERY THIN PROFILE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:1.2/3.3 V
Prop。Delay @ Nom-Sup:24 ns传播延迟(tpd):24 ns
认证状态:Not Qualified座面最大高度:0.5 mm
子类别:Bus Driver/Transceivers最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.1 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:BUTT端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
宽度:1.6 mmBase Number Matches:1

74AUP2G125GM 数据手册

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74AUP2G125  
Low-power dual buffer/line driver; 3-state  
Rev. 02 — 19 April 2007  
Product data sheet  
1. General description  
The 74AUP2G125 provides the dual non-inverting buffer/line driver with 3-state output.  
The 3-state output is controlled by the output enable input (nOE). A HIGH level at pin nOE  
causes the output to assume a high-impedance OFF-state. This device has the  
input-disable feature, which allows floating input signals. The inputs are disabled when the  
output enable input nOE) is HIGH.  
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low  
static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial Power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
2. Features  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114-D Class 3A exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101-C exceeds 1000 V  
Low static power consumption; ICC = 0.9 µA (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
Input-disable feature allows floating input conditions  
IOFF circuitry provides partial Power-down mode operation  
Multiple package options  
Specified from 40 °C to +85 °C and 40 °C to +125 °C  

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