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74AUP2G00DC-G PDF预览

74AUP2G00DC-G

更新时间: 2024-02-05 16:02:43
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管逻辑集成电路触发器
页数 文件大小 规格书
17页 82K
描述
Low-power dual 2-input NAND gate

74AUP2G00DC-G 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅: 含铅
是否Rohs认证: 符合生命周期:Obsolete
包装说明:TSSOP, TSSOP8,.12,20Reach Compliance Code:unknown
风险等级:5.78JESD-30 代码:R-PDSO-G8
负载电容(CL):30 pF逻辑集成电路类型:NAND GATE
最大I(ol):0.0017 A端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.12,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH电源:1.2/3.3 V
Prop。Delay @ Nom-Sup:24.9 ns认证状态:Not Qualified
施密特触发器:NO子类别:Gates
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
Base Number Matches:1

74AUP2G00DC-G 数据手册

 浏览型号74AUP2G00DC-G的Datasheet PDF文件第1页浏览型号74AUP2G00DC-G的Datasheet PDF文件第2页浏览型号74AUP2G00DC-G的Datasheet PDF文件第3页浏览型号74AUP2G00DC-G的Datasheet PDF文件第5页浏览型号74AUP2G00DC-G的Datasheet PDF文件第6页浏览型号74AUP2G00DC-G的Datasheet PDF文件第7页 
74AUP2G00  
NXP Semiconductors  
Low-power dual 2-input NAND gate  
7. Functional description  
Table 4.  
Function table[1]  
Input  
nA  
L
Output  
nB  
L
nY  
H
L
H
L
H
H
H
H
H
L
[1] H = HIGH voltage level;  
L = LOW voltage level.  
8. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).  
Symbol  
VCC  
IIK  
Parameter  
Conditions  
Min  
0.5  
50  
0.5  
50  
0.5  
-
Max  
+4.6  
-
Unit  
V
supply voltage  
input clamping current  
input voltage  
VI < 0 V  
mA  
V
[1]  
[1]  
VI  
+4.6  
-
IOK  
output clamping current  
output voltage  
VO < 0 V  
mA  
V
VO  
Active mode and Power-down mode  
VO = 0 V to VCC  
+4.6  
±20  
50  
IO  
output current  
mA  
mA  
mA  
°C  
ICC  
supply current  
-
IGND  
Tstg  
Ptot  
ground current  
50  
65  
-
-
storage temperature  
total power dissipation  
+150  
250  
[2]  
Tamb = 40 °C to +125 °C  
mW  
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
[2] For VSSOP8 packages: above 110 °C the value of Ptot derates linearly at 8.0 mW/K.  
For XSON8, XSON8U and XQFN8U packages: above 45 °C the value of Ptot derates linearly at 2.4 mW/K.  
9. Recommended operating conditions  
Table 6.  
Symbol  
VCC  
Operating conditions  
Parameter  
Conditions  
Min  
0.8  
0
Max  
3.6  
Unit  
supply voltage  
input voltage  
V
VI  
3.6  
V
VO  
output voltage  
Active mode  
0
VCC  
3.6  
V
Power-down mode; VCC = 0 V  
0
V
Tamb  
ambient temperature  
40  
-
+125  
200  
°C  
ns/V  
t/V  
input transition rise and fall rate  
VCC = 0.8 V to 3.6 V  
74AUP2G00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 5 June 2008  
4 of 17  
 
 
 
 
 
 

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