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70V3379S4BCG PDF预览

70V3379S4BCG

更新时间: 2024-09-20 00:38:27
品牌 Logo 应用领域
艾迪悌 - IDT 时钟静态存储器输出元件内存集成电路
页数 文件大小 规格书
17页 729K
描述
HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM

70V3379S4BCG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:CABGA
包装说明:BGA, BGA256,16X16,40针数:256
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.16
最长访问时间:4.2 ns其他特性:PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
JESD-30 代码:S-PBGA-B256JESD-609代码:e1
长度:17 mm内存密度:589824 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:18
湿度敏感等级:3功能数量:1
端口数量:2端子数量:256
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA256,16X16,40
封装形状:SQUARE封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:2.5/3.3,3.3 V认证状态:Not Qualified
座面最大高度:1.7 mm最大待机电流:0.015 A
最小待机电流:3.15 V子类别:SRAMs
最大压摆率:0.46 mA最大供电电压 (Vsup):3.45 V
最小供电电压 (Vsup):3.15 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
宽度:17 mmBase Number Matches:1

70V3379S4BCG 数据手册

 浏览型号70V3379S4BCG的Datasheet PDF文件第2页浏览型号70V3379S4BCG的Datasheet PDF文件第3页浏览型号70V3379S4BCG的Datasheet PDF文件第4页浏览型号70V3379S4BCG的Datasheet PDF文件第5页浏览型号70V3379S4BCG的Datasheet PDF文件第6页浏览型号70V3379S4BCG的Datasheet PDF文件第7页 
HIGH-SPEED 3.3V 32K x 18  
SYNCHRONOUS PIPELINED  
DUAL-PORT STATIC RAM  
WITH 3.3V OR 2.5V INTERFACE  
IDT70V3379S  
Š
Features:  
– Data input, address, byte enable and control registers  
True Dual-Port memory cells which allow simultaneous  
access of the same memory location  
High-speed clock to data access  
– Self-timedwriteallowsfastcycletime  
Separate byte controls for multiplexed bus and bus  
matching compatibility  
– Commercial:4.2/5/6ns(max.)  
LVTTL- compatible, single 3.3V (±150mV) power supply for  
core  
– Industrial: 5ns (max)  
Pipelined output mode  
LVTTL- compatible, selectable 3.3V (±150mV)/2.5V (±125mV)  
power supply for I/Os and control signals on each port  
Industrial temperature range (-40°C to +85°C) is  
available for selected speeds  
Counter enable and reset features  
Dual chip enables allow for depth expansion without  
additional logic  
Full synchronous operation on both ports  
– 7.5ns cycle time, 133MHz operation (9.6 Gbps bandwidth)  
– Fast 4.2ns clock to data out  
Available in a 128-pin Thin Quad Plastic Flatpack (TQFP)  
and 208-pin fine pitch Ball Grid Array, and 256-pin  
Ball Grid Array  
– 1.8ns setup to clock and 0.7ns hold on all control, data, and  
address inputs @ 133MHz  
Green parts available, see ordering information  
FunctionalBlockDiagram  
UBL  
UBR  
LB  
R
LB  
R/W  
L
L
R/W  
R
B
B
B B  
W W  
W W  
0
L
1
L
1
R
0
R
CE0L  
CE0R  
CE1L  
CE1R  
OE  
L
OER  
Dout0-8_L  
Dout9-17_L  
Dout0-8_R  
Dout9-17_R  
32K x 18  
MEMORY  
ARRAY  
,
I/O0R - I/O17R  
.
I/O0 L - I/O1 7 L  
Din_L  
Din_R  
CLK  
L
CLK  
R
A14L  
A0L  
A14R  
A0R  
Counter/  
Address  
Reg.  
Counter/  
Address  
Reg.  
ADDR_L  
ADDR_R  
CNTRST  
L
CNTRST  
R
ADS  
R
ADS  
L
L
CNTEN  
CNTEN  
R
4833 tbl 01  
AUGUST 2015  
1
DSC 4833/13  
©2015 Integrated Device Technology, Inc.  

70V3379S4BCG 替代型号

型号 品牌 替代类型 描述 数据表
70V3379S4PRFG IDT

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HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
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