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7024L25JGB PDF预览

7024L25JGB

更新时间: 2024-09-16 19:31:23
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
22页 187K
描述
Dual-Port SRAM, 4KX16, 25ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-84

7024L25JGB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:LCC
包装说明:QCCJ, LDCC84,1.2SQ针数:84
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.05
最长访问时间:25 nsI/O 类型:COMMON
JESD-30 代码:S-PQCC-J84JESD-609代码:e3
长度:29.3116 mm内存密度:65536 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端口数量:2端子数量:84
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:4KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC84,1.2SQ
封装形状:SQUARE封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
筛选级别:MIL-PRF-38535 Class B座面最大高度:4.572 mm
最大待机电流:0.004 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.28 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Matte Tin (Sn) - annealed端子形式:J BEND
端子节距:2.54 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:29.3116 mm
Base Number Matches:1

7024L25JGB 数据手册

 浏览型号7024L25JGB的Datasheet PDF文件第2页浏览型号7024L25JGB的Datasheet PDF文件第3页浏览型号7024L25JGB的Datasheet PDF文件第4页浏览型号7024L25JGB的Datasheet PDF文件第5页浏览型号7024L25JGB的Datasheet PDF文件第6页浏览型号7024L25JGB的Datasheet PDF文件第7页 
HIGH-SPEED  
IDT7024S/L  
4K x 16 DUAL-PORT  
STATIC RAM  
IDT7024 easily expands data bus width to 32 bits or more  
using the Master/Slave select when cascading more than  
one device  
M/S = H for BUSY output flag on Master  
M/S = L for BUSY input on Slave  
Interrupt Flag  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
Battery backup operation2V data retention  
TTL-compatible, single 5V (±10%) power supply  
Available in 84-pin PGA, Flatpack, PLCC, and 100-pin Thin  
Quad Flatpack  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Green parts availble, see ordering information  
Features  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
Military:20/25/35/55/70ns(max.)  
Industrial:55ns (max.)  
– Commercial:15/17/20/25/35/55ns(max.)  
Low-power operation  
IDT7024S  
Active:750mW(typ.)  
Standby: 5mW (typ.)  
IDT7024L  
Active:750mW(typ.)  
Standby: 1mW (typ.)  
Separate upper-byte and lower-byte control for multiplexed  
bus compatibility  
FunctionalBlockDiagram  
R/W  
L
R/W  
R
R
UB  
UBL  
LB  
CE  
OE  
L
L
L
LBR  
CE  
R
R
OE  
I/O8L-I/O15L  
I/O0L-I/O7L  
I/O8R-I/O15R  
I/O  
Control  
I/O  
Control  
I/O0R-I/O7R  
BUSY (1,2)  
L
BUSYR  
(1,2)  
A
11R  
0R  
A
11L  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A
0L  
A
12  
12  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE  
OE  
R/W  
R
CE  
OE  
R/W  
L
L
R
R
L
SEM  
R
SEM  
L
(2)  
INT (2)  
L
M/S  
INTR  
2740 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY outputs and INT outputs are non-tri-stated push-pull.  
JUNE 2013  
1
DSC 2740/14  
©2013IntegratedDeviceTechnology,Inc.  

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