Datasheet > 6L60SB-SMBF-TO277

6L60SB-SMBF-TO277

更新时间： 2024-09-19 01:16:31

品牌	Logo	应用领域
佑风微 - YFW		/
页数	文件大小	规格书
3页	1308K
描述
Trench MOS Barrier Schottky Rectifier

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中文翻译

获取价格

数据手册

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6L60SB-SMBF-TO277 数据手册

6L60SB

6L60SP

Trench MOS Barrier Schottky Rectifier

Features

• Advanced trench technology

• Low forward voltage drop

• Low power losses

TO-277ꢁ

6L60SPꢁ

SMB-FLꢁ

6L60SB

• High efficiency operation

• Lead Free Finish, RoHS Compliant

Applications

• DC/DC Converters

• AC/DC Adaptors

ꢀꢁ

ꢉꢊꢋꢌꢅꢆꢇꢂꢂꢂꢂꢂꢂ

ꢍꢁ

ꢂꢂꢂꢂꢃꢄꢅꢆꢇꢁ

ꢈꢁ

Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

V^RRM

Limit

Unit

Maximum repetitive peak reverse voltage

Maximum average forward rectified current

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

Operating junction and storage temperature range

Typical thermal resistance per diode

I^F(AV)

IFSM

T^J, TSTG

R^ƟJL

150

°C

-40 to +150

SMB-FL

TO-277

°C/W

(Mounted on FR-4 PCB)

TYP.

MAX.

I^F=2A

TJ=25°C

0.42

0.32

0.49

0.41

Instantaneous forward voltage

TJ=125°C

TJ=25°C

TJ=125°C

T^J=25°C

VF(1)

IR(2)

0.53

IF=6A

Instantaneous reverse current per diode

at rated reverse voltage

Notes:

T^J=125°C

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ꢀ 40 ms

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