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6LP04MH PDF预览

6LP04MH

更新时间: 2024-11-07 03:06:19
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三洋 - SANYO 开关通用开关
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描述
P-Channel Silicon MOSFET General-Purpose Switching Device Applications

6LP04MH 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.3
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.1 A
最大漏极电流 (ID):0.1 A最大漏源导通电阻:8.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

6LP04MH 数据手册

 浏览型号6LP04MH的Datasheet PDF文件第2页浏览型号6LP04MH的Datasheet PDF文件第3页浏览型号6LP04MH的Datasheet PDF文件第4页 
Ordering number : ENA0457  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
6LP04MH  
Features  
1.5V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
--60  
±10  
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
--100  
--400  
0.6  
mA  
mA  
W
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
DP  
P
D
Mounted on a ceramic board (900mm20.8mm)  
Tch  
150  
°C  
°C  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--60  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=--1mA, V =0V  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=--60V, V =0V  
GS  
--1  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
±10  
V (off)  
GS  
=--10V, I =--100µA  
--0.4  
130  
--1.4  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--50mA  
220  
mS  
D
R
(on)1  
I
D
I
D
I
D
=--50mA, V =--4V  
GS  
6.5  
7.4  
10  
8.5  
11  
DS  
DS  
DS  
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
=--30mA, V =--2.5V  
GS  
=--10mA, V =--1.5V  
GS  
20  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=--20V, f=1MHz  
=--20V, f=1MHz  
=--20V, f=1MHz  
15  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
DS  
DS  
DS  
Coss  
Crss  
3.5  
1.0  
75  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
t
r
116  
665  
270  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
Marking : QA  
Continued on next page.  
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that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
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applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
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